Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 26 for “"Heteroepitaxy"”.
-
Shadow mask assisted heteroepitaxy of compound semiconductor nanostructures
Shadow Mask assisted Molecular Beam Epitaxy (SMMBE) is a technique enabling selected area epitaxy of semiconductor heterostructures through shadow masks. The objective of this work was the development of the SMMBE technique for the reliable fabrication of compound semiconductor nanostructures of …
-
Germanium on silicon heteroepitaxy for high efficiency photovoltaic devices
Optoelectronic devices based on III-V direct gap semiconductors enable efficient energy conversion for photovoltaic cells, light emission for LEDs, and on-chip communication via various microphotonic components. However, widespread adoption of III-V solar cells is limited by the expensive Germanium …
-
Microscopy study of extreme lattice mismatched heteroepitaxy using interfacial misfit arrays
The Sb-bearing compounds offer a wide range of electronic bandgaps, bandgap offsets and electronic barriers along with the extremely high electron mobility and therefore enable a variety of high speed, low power electronic devices and infrared light sources. Therefore, lattice-mismatched epitaxy of …
-
Ordering in weakly bound molecular layers: organic-inorganic and organic-organic heteroepitaxy
… (HBC) on graphite. The organic-organic heteroepitaxy system PTCDA on HBC on graphite is investigated in order to clarify to which extent the ordering mechanism there differs from that of the organic-inorganic heteroepitaxy system PTCDA on graphite. As a result of this investigation, a …
-
Chemical evolution, heteroepitaxy, and monolayer patterning of solution-derived lithium niobate thin layers
Integrated lithium niobate (LiNbO$\sb3$) thin films are of technical interest for frequency doubling and a variety of efficient photonic circuit element applications. Solution deposition of such films on near lattice-matched substrates has been conducted, allowing low temperature processing, …
-
Gallium nitride selective area growth and heteroepitaxy via PAMBE for power device applications
Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2026-12-01
-
Empirical correlation of minority carrier lifetime to detect density profile in germanium on silicon heteroepitaxy
High-quality Ge-on-Si (GoS) heterostructures are pursued for many applications, including near infrared (NIR) photodetectors and integration with III-V films for multi-junction photovoltaics. However, challenges such as thermal expansion coefficient mismatch and lattice mismatch between Ge and Si …
-
Graphene-assisted spontaneous relaxation and direct CVD growth of graphene on III-V substrate
… homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic …
-
Morphological Evolution During Molecular Beam Epitaxy of Germanium/germanium(001) and Silicon/germanium(111)
… investigated the evolution of islands during the heteroepitaxy of Si on Ge(111). This study involves a systematic investigation of the island nucleation kinetics, morphology and microstructure for various thicknesses and deposition temperatures. The islands formed are predominantly …
-
Remote Epitaxy by In-Situ Grown BN and InGaN Strain Relaxation
… freestanding membranes. Previously, remote heteroepitaxy was found to be able to relax the misfit strain caused by lattice mismatch. For example, the large lattice mismatch between the high indium content indium gallium nitride (InGaN) and the GaN substrate impedes the efficiency of the …
-
Templated Multiferroic Nanocomposites by Ion-Lithography
… materials, have been a novel platform to study heteroepitaxy. The perovskite-spinel system is one of the most popular VAN structures to study multiferroic coupling. For example, ferroelectric BiFeO3 (BFO) and ferrimagnetic CoFe2O4 (CFO) could grow epitaxially on [001]-SrTiO3 substrate, forming …
-
Role of point defects in Perovskite microwave resonators
… conductors, and substrates for semiconductor heteroepitaxy. Engineering defective structures in an attempt to modify properties is a long-established technique in materials chemistry; yet, no models exist which can predict the structure of perovskite compounds containing extrinsic point …
-
Advanced Epitaxy on 2D Materials for Bottom-up Heterointegration with Low-defects and Membrane Production with High-throughput
… is observed through the implementation of remote heteroepitaxy, which involves the process of conducting heteroepitaxy on graphene-coated substrates. This approach facilitates spontaneous relaxation of misfit strain and reduction of misfit dislocations in epilayers due to the slippery graphene …
-
Grafeno ant skandžio oksido fotolitografija /
… the nitride technology group. In this institute, heteroepitaxy of group III nitrides on sapphire, silicon carbide, oxides of rare earth elements and homoepitaxy on bulk GaN substrates is carried out. The goal of the project is to obtain a metal-dielectric-semiconductor junction by replacing the …
-
Insights into formation of semiconductor nanocrystals : from first principles calculations to kinetic models of nucleation and growth
… functional theory calculations. Homoepitaxy and heteroepitaxy reactions on several relaxed and reconstructed wurtzite CdSe surfaces are investigated. Furthermore, the effect of ligand binding on crystal growth is examined using several model ligands. We show that ligands exhibit a range of …
-
Multi-scale modelling of III-nitrides: from dislocations to the electronic structure
… theoretical studies of the critical thickness in heteroepitaxy. Subsequently, (iii) to develop an improved geometrical model for threading dislocation density reduction during the growth of thick GaN films. The second part of this thesis employs first principles techniques (iv) to investigate the …
-
Electronic transport and structure of a surface quantum well
Lattice-mismatched heteroepitaxy is present in the growth of any thin-film heterostructure, and has inevitable consequences on the nature of film growth. A mismatch in the lattice parameter between two materials leads to strain within both films, which can lead to dislocations and deformations in …
-
Selective epitaxial growth techniques to integrate high-quality germanium on silicon
… resolve a longstanding engineering challenge in heteroepitaxy, finally providing the cost reduction needed for widespread commercialization of multijunction solar cells, light-emitting diodes, and high-mobility transistors on Si substrates.'
Page 1 of 2