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University of Illinois at Urbana-Champaign

Growth of lattice-mismatched iii-phosphide optoelectronic devices by molecular beam epitaxy

Abstract

dc:description

Epitaxial growth of high-quality III-V semiconductors that are lattice-mismatched to conventional substrates is vital to device applications such as high-efficiency multi-junction solar cells, LEDs, and laser diodes. Challenges arise due to the formation of defects driven by lattice mismatch that can damage the performance of III-V devices. In this thesis, I describe the growth of high-quality III-P materials by molecular beam epitaxy in lattice-mismatched systems for optoelectronic device applications. My work includes the development of compositionally graded buffers and growth optimization studies to mitigate challenges for lattice-mismatched materials. First, I demonstrate metamorphic 1.7 eV In0.63Ga0.37P front-junction and rear-heterojunction solar cells grown on GaAs substrates that show promise for high efficiency 1.7 eV/1.1 eV double junction solar cells and photovoltaic devices with efficient operation at elevated temperatures. Next, I demonstrate growth of GaP on silicon on insulator (SOI). Nanophotonic devices based on GaP have recently attracted significant interest due to their unique properties such as large refractive index, relatively wide bandgap, and non-centrosymmetric crystal structure, while SOI wafers are commonly used in silicon photonics. Taken together, this dissertation shows the challenges and opportunities of phosphide-based materials and devices grown on lattice-mismatched substrates.

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Electrical & Computer Engr
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2023

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Kim, Mijung
Contributors dc:contributor
  • Lee, Minjoo L
  • Bayram, Can
  • Dallesasse, John
  • Shim, Moonsub

Subjects

dc:subject × 5

Rights

dc:rights
Statement dc:rights
  • Copyright 2023 Mijung Kim
Language dc:language
en, eng

Identifiers

dc:identifier.*
Handle dc:identifier
https://hdl.handle.net/2142/122257

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Kim, Mijung. Growth of lattice-mismatched iii-phosphide optoelectronic devices by molecular beam epitaxy. Dissertation thesis, University of Illinois at Urbana-Champaign, 2023. https://hdl.handle.net/2142/122257