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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 34 for “"Lattice-mismatched"”.
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Novel structures for lattice-mismatched infrared photodetectors
… GaSb p-i-n diodes were grown on Si and GaAs lattice-mismatched substrates by molecular beam epitaxy (MBE) under optimised growth conditions. For the sample grown on Si, an AlSb nucleation layer was used to reduce the occurrence of twinning defects. In addition to the samples grown on …
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Lattice mismatched compound semiconductors and devices on silicon
… of high quality III-V compound semiconductors (lattice-matched to InP) on Si substrates by metal-organic chemical vapor deposition (MOCVD) was studied. Epitaxy of III-V/Si (or Ge) may give rise to antiphase disorders due to the inequivalence of the two face-centered-cubic sublattices of III-V …
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The fabrication and market analysis of lattice mismatched devices
Lattice mismatched semiconductor substrates provide a platform for higher performance semiconductor devices. Through epitaxial growth on GaAs, the lattice constant of the film can be expanded resulting in a desired InxGalxAs film on which devices can be fabricated. The resulting device exhibits …
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Microscopy study of extreme lattice mismatched heteroepitaxy using interfacial misfit arrays
… devices and infrared light sources. Therefore, lattice-mismatched epitaxy of Sb-based materials on GaAs and Si substrates has attracted considerable attention. However, due to material growth issues such as large lattice mismatch, anti-phase domains and thermal expansion coefficient mismatch, …
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Engineered substrates for coplanar integration of lattice-mismatched semiconductors with silicon
… to provide a coplanar integration platform for lattice-mismatched semiconductors. The various innovations that were necessary to realize epitaxial layer transfer from virtual substrates stem from the fact that thin films of Ge are difficult to planarize. The large surface roughness of graded …
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Growth of lattice-mismatched iii-phosphide optoelectronic devices by molecular beam epitaxy
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2025-12-01
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Lattice-mismatched epitaxy of AlInP and characterization of its microstructure and luminescence
… atoms on the growth surface. Historically, lattice matching of the ternary alloy to a substrate is another important constraint that limits access to all but a few alloy fractions. A technologically important ternary alloy in which both surface kinetics and lattice matching is crucial is the …
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Lattice mismatched epitaxy of heterostructures for non-nitride green light emitting devices
… indium gallium phosphide (AlInGaP), with lattice constants less than that of GaAs, offer improved electrical and optical characteristics over commonly used GaAsmatched material. Also, integration of optical III-V material on the CMOS platform has long been a technological goal, and these …
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Advanced engineered substrates for the integration of lattice-mismatched materials with silicon
… comes from the integration of judiciously chosen lattice-mismatched materials with Si. However, the integration of such structures typically poses significant technical challenges. The work contained in this thesis seeks to address several of these important issues, primarily through the use of …
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Materials issues with the integration of lattice-mismatched In Inx̳Ga₁âx̳As devices on GaAs
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.
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Growth and Characterization of Lattice-Mismatched In(x)ga(1-X)p Yellow Light Emitting Diodes on GaP
To demonstrate the feasibility of using a lattice-mismatched substrate, performance data of yellow LEDs using the step-graded buffer on a GaP substrate are given. These devices have an active region consisting of $\rm In\sb{0.3}Ga\sb{0.7}P$ that is in between an n-type, step-graded buffer and a top …
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Graphene-assisted spontaneous relaxation and direct CVD growth of graphene on III-V substrate
… At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic device performances, …
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Monolithic integration of 1.55 micron photodetectors with GaAs electronics for high speed optical communications
… which requires the direct growth of InGaAs on lattice-mismatched GaAs substrates using molecular beam epitaxy (MBE). A customized OEIC chip was designed and fabricated. Lattice-mismatched MBE growth was studied and InGaAs photodetectors on GaAs were produced using the relaxed buffer growth. …
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Photoluminescence studies of carrier dynamics in (indium(x),aluminum(x)) gallium(1-x) arsenic/gallium arsenide quantum well structures
… to well width, alloy composition, strain (in lattice-mismatched structures), and interface roughness. Continuous wave (cw) and time-resolved photoluminescence, and photoluminescence excitation (PLE) measurements were used to gain insight into the physics of GaAs alloy quantum structures.
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Raman scattering in free standing porous Si films
… thermal isolation and as floating substrates for lattice-mismatched hetero-integration.
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Molecular beam epitaxial growth and characterization of indium antimonide on gallium arsenide
… growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by transmission electron microscopy (TEM), X-ray rocking curves, Hall measurements, photoluminescence (PL), and …
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Development of the recess mounting with monolithic metallization optoelectronic integrated circuit technology for optical clock distribution applications
… is used to integrate Ino.47Ga0.53As/InP based lattice-matched high quantum efficiency p-i-n photodetectors on silicon chips to build high performance optoelectronic integrated circuits [1]. In RM3 integration, partially processed heterostructure devices are placed in recesses formed in the …
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Theory and optimisation of metamorphic photonic devices
… – in which a “virtual” substrate with a desired lattice constant is obtained by growing a lattice-mismatched metamorphic buffer layer (MBL) on a conventional substrate such as InP or GaAs – is beginning to attract increasing interest due to its potential to facilitate the development of improved …
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Germanium-on-silicon virtual substrate for lateral multijunction photovoltaics
… enable efficient energy conversion. However, lattice matching between cell and substrate requires the use of expensive Ge or III-V substrates, which limits widespread application of III-V solar cells. Cost reduction can be achieved by using Ge-on-Si virtual substrate where a thin layer of Ge …
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Advanced Epitaxy on 2D Materials for Bottom-up Heterointegration with Low-defects and Membrane Production with High-throughput
… from defects or interfacial states caused by lattice mismatch and disparate thermal expansion coefficients. In this thesis, novel epitaxy techniques and an in-depth investigation of their underlying principles are introduced to tackle these limitations inherent in conventional epitaxy …
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