{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/122257"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/122257","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Growth of lattice-mismatched iii-phosphide optoelectronic devices by molecular beam epitaxy","abstract":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2025-12-01","abstract_html":"Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2025-12-01","abstract_has_math":false,"creators":["Kim, Mijung"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Lee, Minjoo L","Bayram, Can","Dallesasse, John","Shim, Moonsub"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2023,"date_issued":"2023-12","date_published":"2023-12","updated_at":"2026-07-22T22:25:00Z","subjects":["Lattice-mismatched","Iii-v","Epitaxy","Mbe","Optoelectronic Devices"],"languages":["en","eng"],"rights":["Copyright 2023 Mijung Kim"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://hdl.handle.net/2142/122257","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Lee, Minjoo L","Bayram, Can","Dallesasse, John","Shim, Moonsub"]},{"key":"dc:creator","label":"Author","values":["Kim, Mijung"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2023-12","2023-11-30"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Lattice-mismatched","Iii-v","Epitaxy","Mbe","Optoelectronic Devices"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en","eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2023 Mijung Kim"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://hdl.handle.net/2142/122257"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2025-12-01","The student, Mijung Kim, accepted the attached license on 2023-11-30 at 01:12.","The student, Mijung Kim, submitted this Dissertation for approval on 2023-11-30 at 01:37.","This Dissertation was approved for publication on 2023-11-30 at 12:27.","DSpace SAF Submission Ingestion Package generated from Vireo submission #20075 on 2024-03-01 at 13:54:16","Epitaxial growth of high-quality III-V semiconductors that are lattice-mismatched to conventional substrates is vital to device applications such as high-efficiency multi-junction solar cells, LEDs, and laser diodes. Challenges arise due to the formation of defects driven by lattice mismatch that can damage the performance of III-V devices. In this thesis, I describe the growth of high-quality III-P materials by molecular beam epitaxy in lattice-mismatched systems for optoelectronic device applications. My work includes the development of compositionally graded buffers and growth optimization studies to mitigate challenges for lattice-mismatched materials. First, I demonstrate metamorphic 1.7 eV In0.63Ga0.37P front-junction and rear-heterojunction solar cells grown on GaAs substrates that show promise for high efficiency 1.7 eV/1.1 eV double junction solar cells and photovoltaic devices with efficient operation at elevated temperatures. Next, I demonstrate growth of GaP on silicon on insulator (SOI). Nanophotonic devices based on GaP have recently attracted significant interest due to their unique properties such as large refractive index, relatively wide bandgap, and non-centrosymmetric crystal structure, while SOI wafers are commonly used in silicon photonics. Taken together, this dissertation shows the challenges and opportunities of phosphide-based materials and devices grown on lattice-mismatched substrates."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Growth of lattice-mismatched iii-phosphide optoelectronic devices by molecular beam epitaxy"]}]}],"canonical_facts":{"dc:contributor":["Lee, Minjoo L","Bayram, Can","Dallesasse, John","Shim, Moonsub"],"dc:creator":["Kim, Mijung"],"dc:date":["2023-12","2023-11-30"],"dc:description":["Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2025-12-01","The student, Mijung Kim, accepted the attached license on 2023-11-30 at 01:12.","The student, Mijung Kim, submitted this Dissertation for approval on 2023-11-30 at 01:37.","This Dissertation was approved for publication on 2023-11-30 at 12:27.","DSpace SAF Submission Ingestion Package generated from Vireo submission #20075 on 2024-03-01 at 13:54:16","Epitaxial growth of high-quality III-V semiconductors that are lattice-mismatched to conventional substrates is vital to device applications such as high-efficiency multi-junction solar cells, LEDs, and laser diodes. Challenges arise due to the formation of defects driven by lattice mismatch that can damage the performance of III-V devices. In this thesis, I describe the growth of high-quality III-P materials by molecular beam epitaxy in lattice-mismatched systems for optoelectronic device applications. My work includes the development of compositionally graded buffers and growth optimization studies to mitigate challenges for lattice-mismatched materials. First, I demonstrate metamorphic 1.7 eV In0.63Ga0.37P front-junction and rear-heterojunction solar cells grown on GaAs substrates that show promise for high efficiency 1.7 eV/1.1 eV double junction solar cells and photovoltaic devices with efficient operation at elevated temperatures. Next, I demonstrate growth of GaP on silicon on insulator (SOI). Nanophotonic devices based on GaP have recently attracted significant interest due to their unique properties such as large refractive index, relatively wide bandgap, and non-centrosymmetric crystal structure, while SOI wafers are commonly used in silicon photonics. Taken together, this dissertation shows the challenges and opportunities of phosphide-based materials and devices grown on lattice-mismatched substrates."],"dc:format":["application/pdf"],"dc:identifier":["https://hdl.handle.net/2142/122257"],"dc:language":["en","eng"],"dc:rights":["Copyright 2023 Mijung Kim"],"dc:subject":["Lattice-mismatched","Iii-v","Epitaxy","Mbe","Optoelectronic Devices"],"dc:title":["Growth of lattice-mismatched iii-phosphide optoelectronic devices by molecular beam epitaxy"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:00Z"}