Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 43 for “"Transient Spectroscopy"”.
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Distinguishing Homogeneous and Heterogeneous Origins of Nonexponential Dynamics Using Multiple Population Period Transient Spectroscopy
… called MUPPETS (multiple population period transient spectroscopy) which can distinguish between the origins of nonexponential dynamics. MUPPETS uses two time periods where the first time period acts as a filter time for fast decaying molecules. Time domain MUPPETS can be transferred to rate …
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Deep-Level Transient Spectroscopy Studies of Gallium Arsenide - Aluminum Gallium Arsenide Heterostructures and Superlattices
… First, the feasibility of using deep-level transient spectroscopy (DLTS) to measure conduction band-edge discontinuities in GaAs - AlGaAs quantum-well heterostructures is evaluated theoretically and experimentally. Second, defects in GaAs - AlGaAs superlattices are examined using DLTS.
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Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy
System effects and data analysis for deep level transient spectroscopy (DLTS) have been examined and applied to study the deep levels in the GaAs-GaP system.
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Study of Deep Levels in (100) and (311)B Molecular Beam Epitaxial Gallium-Arsenide by Constant-Capacitance Deep Level Transient Spectroscopy
… (MBE) GaAs by constant capacitance deep level transient spectroscopy (CC-DLTS) has been divided into three parts. First, the deep level centers unique to MBE GaAs layers were identified; second, the effect of growth and annealing conditions on trap concentrations were determined; and finally, …
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A Study of Electron Traps in Vapor Phase Epitaxial Gallium-Arsenide Grown in the Presence of Oxygen (Dlts, Deep Level Transient Spectroscopy, Semiconductors, Defects)
… known as constant capacitance deep level transient spectroscopy is presented, which includes an accurate treatment of large and inhomogeneous defect densities, and which allows a precise determination of deep level concentrations and activation energies. The design and construction of the …
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Growth of Wurtzite Gallium Nitride Epitaxial Films on Sapphire Substrate by Reactive Molecular Beam Epitaxy and Material Characterization
… transmission microscopy (XTEM) and deep level transient spectroscopy (DLTS) results also show consistency with electrical results. For the growth of Mg-doped GaN films, larger ammonia flow rates produced electrically better films. This phenomenon has been accounted for by using a simple Ga …
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Persistent photoconductivity and deep levels in aluminum gallium indium phosphide
… and by constant capacitance deep level transient spectroscopy. The samples studied were grown lattice matched to gallium arsenide (GaAs) by metalorganic chemical vapor deposition. Several samples with different aluminum compositions were studied; one set of samples was doped n-type with …
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Hydrogenation of High Purity Gallium-Arsenide and Liquid Phase Epitaxy Growth of High Purity Indium-Gallium-Arsenide
… been investigated by photo-thermal ionization spectroscopy, low temperature photoluminescence, capacitance-voltage and Hall-effect measurements. The concentration of deep levels in these samples was determined by constant capacitance deep level transient spectroscopy. After hydrogenation, the …
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Reactions of Excited State Cationic Dyes
… state of organic dye molecules. Therefore, a transient spectrometer with a time resolution of 36 ps was designed and built; this is described in chapter 2. In the third chapter, intersystem crossing in a cyanine dye, induced by heavy atom counterions and heavy atom containing solvent is …
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Defect spectroscopy on Cu(In,Ga)(S,Se) 2 -based heterojunction solar cells: role of the damp-heat treatment
… capacitance-voltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. We observe the presence of electronic defect states which showed an increasing activation energy due to damp-heat exposure. We conclude that the response originates from an energetically …
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A study of electron traps in vapor phase epitaxial gallium arsenide grown in the presence of oxygen
… known as constant capacitance deep level transient spectroscopy is presented, which includes an accurate treatment of large and inhomogeneous defect densities, and which allows a precise determination of deep level concentrations and activation energies. The design and construction of the …
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The impact of electron traps on the transfer performance of acoustic charge transport devices
… by the SAW is investigated through deep level transient spectroscopy (DLTS) studies, measurements on ACT devices, and a theoretical analysis of the effects of the electric fields, acoustic strains, and channel heating associated with the SAW.
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An exploration of chemical agents detection using the quantum fingerprint [superscript TM] technology
… as charge traps which can be excited and the transient signals associated with their relaxation examined. A Charge-based Deep Level Transient Spectroscopy (Q-DLTS) system has been used to characterize the deep level states created by surface impurities. In this research, critical components …
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4H silicon carbide particle detectors: study of the defects induced by high energy neutron irradiation
… the defect kinetic it were carried out a thermal transient spectroscopy (DLTS and PICTS) analysis of different samples irradiated at increasing fluences. The defect evolution was correlated with the transport properties of the irradiated detector, always comparing with the un-irradiated one. The …
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Investigation of performance and the influence of environmental conditions on strip detectors for the ATLAS Inner Tracker Upgrade
… characterisation in SiO$_2$ with Deep-level Transient Spectroscopy (DLTS).
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Defect reactions and impurity control in silicon
… V to initiate the defect reactions. Deep level transient spectroscopy (DLTS) has been used to identify specific defects and to measure defect concentrations. The experimental results can be summarized in terms of a complex hierarchy diagram of defect reactions. We describe the defect reactions …
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Power Dependent Study of CDSE-ZNS Quantum Dot Relaxation Dynamics by 2D Muppets
… byproduct. Multiple population period transient spectroscopy, (MUPPETS), is a new two-dimensional spectroscopic technique that uses decay-rate variation to investigate heterogeneity in multiexponential processes. In this paper stat dependent behavior is used to isolate and identify the …
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Residual lattice defects in silicon(100) films doped with low-energy positive boron and positive arsenic ions during growth by molecular-beam epitaxy: Variation with ion energy and growth temperature
… Photoluminescence (PL) and deep level transient spectroscopy (DLTS) were used to assess optical and electronic film quality by identifying and measuring concentrations of ion-induced and inherent residual lattice defects. Bulk-like PL spectra containing sharp, intense, dopant …
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Electrical studies of silicon and low K dielectric material
… voltage for a diode junction. Deep level transient spectroscopy (DLTS) as one of the most sensitive electrical measurement techniques can detect electrically active impurity concentration on the level of 10-1 to 10-5 of substrate doping concentration. The characteristic energy level and …
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