Growth of Wurtzite Gallium Nitride Epitaxial Films on Sapphire Substrate by Reactive Molecular Beam Epitaxy and Material Characterization

For the growth of n-type films, a specific ammonia flow rate (or V/III ratio if Ga flux is fixed) was required to obtain films with high electron Hall mobility. X-ray diffraction (XRD), photoluminescence (PL), cross-sectional transmission microscopy (XTEM) and deep level transient spectroscopy (DLTS) results also show consistency with electrical results. For the growth of Mg-doped GaN films, larger ammonia flow rates produced electrically better films. This phenomenon has been accounted for by using a simple Ga vacancy model. Also by carrying out secondary ion mass spectroscopy (SIMS) study for the Mg-doped films, the behavior of Mg and H affected by the ammonia flow rate during the film growth was experimentally investigated for the first time.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Kim, Wook

Contributors dc:contributor

• Morkoc, Hadis

• Engineering, Materials Science

Language dc:language

eng

Identifier

(MiAaPQ)AAI9904508

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/82906