{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82906"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82906","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Growth of Wurtzite Gallium Nitride Epitaxial Films on Sapphire Substrate by Reactive Molecular Beam Epitaxy and Material Characterization","abstract":"For the growth of n-type films, a specific ammonia flow rate (or V/III ratio if Ga flux is fixed) was required to obtain films with high electron Hall mobility. X-ray diffraction (XRD), photoluminescence (PL), cross-sectional transmission microscopy (XTEM) and deep level transient spectroscopy (DLTS) results also show consistency with electrical results. For the growth of Mg-doped GaN films, larger ammonia flow rates produced electrically better films. This phenomenon has been accounted for by using a simple Ga vacancy model. Also by carrying out secondary ion mass spectroscopy (SIMS) study for the Mg-doped films, the behavior of Mg and H affected by the ammonia flow rate during the film growth was experimentally investigated for the first time.","abstract_html":"For the growth of n-type films, a specific ammonia flow rate (or V/III ratio if Ga flux is fixed) was required to obtain films with high electron Hall mobility. X-ray diffraction (XRD), photoluminescence (PL), cross-sectional transmission microscopy (XTEM) and deep level transient spectroscopy (DLTS) results also show consistency with electrical results. For the growth of Mg-doped GaN films, larger ammonia flow rates produced electrically better films. This phenomenon has been accounted for by using a simple Ga vacancy model. Also by carrying out secondary ion mass spectroscopy (SIMS) study for the Mg-doped films, the behavior of Mg and H affected by the ammonia flow rate during the film growth was experimentally investigated for the first time.","abstract_has_math":false,"creators":["Kim, Wook"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Morkoc, Hadis"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:53:34Z","date_published":"2015-09-25T20:53:34Z","updated_at":"2026-07-22T22:26:20Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9904508"],"render_values":[{"text":"(MiAaPQ)AAI9904508","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82906","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Morkoc, Hadis"]},{"key":"dc:creator","label":"Author","values":["Kim, Wook"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:53:34Z","10000-01-01","1998"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82906","(MiAaPQ)AAI9904508"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["For the growth of n-type films, a specific ammonia flow rate (or V/III ratio if Ga flux is fixed) was required to obtain films with high electron Hall mobility. 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