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University of Illinois at Urbana-Champaign
Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy
Abstract
dc:descriptionSystem effects and data analysis for deep level transient spectroscopy (DLTS) have been examined and applied to study the deep levels in the GaAs-GaP system.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Date dc:date
- 10000-01-01
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Day, Ding-Yuan Samuel
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8026477
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/66229