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University of Illinois at Urbana-Champaign
Study of Deep Levels in (100) and (311)B Molecular Beam Epitaxial Gallium-Arsenide by Constant-Capacitance Deep Level Transient Spectroscopy
Abstract
dc:descriptionThe study of deep level traps in molecular beam epitaxial (MBE) GaAs by constant capacitance deep level transient spectroscopy (CC-DLTS) has been divided into three parts. First, the deep level centers unique to MBE GaAs layers were identified; second, the effect of growth and annealing conditions on trap concentrations were determined; and finally, that information was applied to the study of the nature of the deep level traps in (100) and (311)B GaAs layers.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- DeJule, Ruthanna Yusa
Subjects
dc:subject × 1Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8711789
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/69352