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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

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Showing 1 to 20 of 38 for “"Compact model"”.

  1. Compact model of ESD diode for circuit simulation

    Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2024-12-01

    uiuc Repository record for Compact model of ESD diode for circuit simulation (opens in a new tab)

  2. Physics-Based Compact Model Development of Field Emitter Arrays

    … Consequently, FEAs lack a physics-based compact model. In this work, a flat stand-off anode was placed on the FEAs, which guarantees the anode-to-emitter distance and the parallel condition. The I-V characteristics in the space charge limit show an unexplained, yet reproducible Negative …

    mit Repository record for Physics-Based Compact Model Development of Field Emitter Arrays (opens in a new tab)

  3. A compact model for silicon controlled rectifiers in low voltage CMOS processes

    This thesis presents an SCR compact model for simulating ESD protection circuits. The aspects of the compact model that are necessary to reproduce measurement data, such as quasi-static I-V curves and transient voltage overshoot, are discussed. These aspects include conductivity modulation of the …

    uiuc Repository record for A compact model for silicon controlled rectifiers in low voltage CMOS processes (opens in a new tab)

  4. A surface-potential-based compact model for partially-depleted silicon-on-insulator MOSFETs

    … edge applications. <br/>The original STAG2 model, developed at the University of Southampton, UK, was among the first compact circuit simulation models to specifically model the behaviour of Partially-Depleted (PD) SOI devices. STAG2 was a robust, surface-potential based compact model, …

    soton Repository record for A surface-potential-based compact model for partially-depleted silicon-on-insulator MOSFETs (opens in a new tab)

  5. A physics based compact model for a diamond optically gated field effect transistor

    Submission original under an indefinite embargo labeled 'Open Access'. The submission was exported from vireo on 2025-10-19 without embargo terms

    uiuc Repository record for A physics based compact model for a diamond optically gated field effect transistor (opens in a new tab)

  6. The development of a new compact model for prediction of forced flow behaviour in longitudinal fin heat sinks with tip bypass

    … subsequently identified the need for so-called "compact models" to assist in the design of electronic enclosures. Compact models use available empirical relations to solve the flow field around a typical heat sink. Current models require significantly less computational power and time compared to …

    pretoria Repository record for The development of a new compact model for prediction of forced flow behaviour in longitudinal fin heat sinks with tip bypass (opens in a new tab)

  7. Compact modeling of circuits and devices in Verilog-A

    The compact model of a circuit or device is a system of linear and/or nonlinear differential equations that effectively models the behavior of the circuit or device. Compact modeling plays a critical role in circuit simulation, because in order to simulate a circuit with a specific component, the …

    mit Repository record for Compact modeling of circuits and devices in Verilog-A (opens in a new tab)

  8. On the Analysis, Design, and Modeling of Electrostatic Discharge Protection Devices for Analog and Radio -Frequency Integrated Circuits

    We present a simulator-independent compact model of a vertical npn transistor suitable for ESD circuit simulation. In addition to modeling accurately the high-current and breakdown effects, we also model accurately the small-signal off-state impedance of the device using s-parameter measurements, …

    uiuc Repository record for On the Analysis, Design, and Modeling of Electrostatic Discharge Protection Devices for Analog and Radio -Frequency Integrated Circuits (opens in a new tab)

  9. Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments

    … temperature range specifications need an HBT compact model to accurately represent the device's performance.</p> <p>In this work, a compact model referenced at 300K was developed to accurately represent both DC and AC electrical performance of the SiGe HBT over an extended temperature range, …

    arkansas Repository record for Device Characterization and Compact Modeling of the SiGe HBT in Extreme Temperature Environments (opens in a new tab)

  10. Experimental Study and Modeling of the GM-I Dependence of Long-Channel Mosfets

    … thesis describes an experimental study and modeling of the current-transconductance dependence of the ALD1106, ALD1107, and CD4007 arrays. The study tests the hypothesis that the I-gm dependence of these 7.8 µm to 10 µm MOSFETs conforms to the Advanced Compact Model (ACM). Results from …

    calpoly Repository record for Experimental Study and Modeling of the GM-I Dependence of Long-Channel Mosfets (opens in a new tab)

  11. ESD circuit design and measurement techniques

    … ESD diode, and it is found that a quasi-static compact model does not accurately describe the observed transient. A non-quasi-static charge control model is used to accurately simulate both the reverse recovery and forward bias behavior. Part 2 of this thesis reports the design and fabrication …

    uiuc Repository record for ESD circuit design and measurement techniques (opens in a new tab)

  12. Near-Optimal Control of Atomic Force Microscope For Non-contact Mode Applications

    A compact model representing the dynamics between piezoelectric voltage inputs and cantilever probe positioning, including nonlinear surface interaction forces, for atomic force microscopes (AFM) is considered. By considering a relatively large cantilever stiffness, singular perturbation methods …

    vt Repository record for Near-Optimal Control of Atomic Force Microscope For Non-contact Mode Applications (opens in a new tab)

  13. Modeling gallium-nitride based high electron Mobility transistors : linking device physics to high voltage and high frequency circuit design

    … in both application regimes requires accurate compact device models that are grounded in physics and can describe the non-linear terminal characteristics. Currently available compact models for HEMTs are empirical and hence are lacking in physical description of the device, which becomes a …

    mit Repository record for Modeling gallium-nitride based high electron Mobility transistors : linking device physics to high voltage and high frequency circuit design (opens in a new tab)

  14. A compact transport and charge model for GaN-based high electron mobility transistors for RF applications

    … in such a rapidly evolving technology, compact device models are essential. In this thesis, a physics-based compact model is developed for short channel GaN HEMTs. The model is based on the concept of virtual source (VS) transport originally developed for scaled silicon field effect …

    mit Repository record for A compact transport and charge model for GaN-based high electron mobility transistors for RF applications (opens in a new tab)

  15. Equation defined device modelling of floating gate M.O.S.F.E.Ts.

    … research work covers the development of a novel compact model for a Floating Gate nMOSFET that will be added to the QUCS library. QUCS (Quite Universal Circuit Simulator) is a GPL simulation software package that was created in 2006 and is continuing to develop and evolve, and there is already a …

    london-metro Repository record for Equation defined device modelling of floating gate M.O.S.F.E.Ts. (opens in a new tab)

  16. Modeling, Characterization, and Design of Silicon Controlled Rectifiers for Electrostatic Discharge Protection Circuits

    … dissertation focuses on the characterization, modeling, and design of silicon controlled rectifiers (SCRs) for electrostatic discharge (ESD) protection applications. The oscillatory transmission line pulse (oTLP) measurement is introduced in this work. oTLP measurements enable indirect …

    uiuc Repository record for Modeling, Characterization, and Design of Silicon Controlled Rectifiers for Electrostatic Discharge Protection Circuits (opens in a new tab)

  17. Fabrication of a nanoporous membrane device for high heat flux evaporative cooling

    … coupled fluid convection and solid conduction compact model, which was necessitated by computational feasibility, which incorporates non-equilibrium and sub-continuum effects at the liquid-vapor interface. This work provides a proof-of-concept demonstration of our biporous evaporation device. …

    mit Repository record for Fabrication of a nanoporous membrane device for high heat flux evaporative cooling (opens in a new tab)

  18. Hazard avoidance for high-speed rough-terrain unmanned ground vehicles

    … based on detailed vehicle and terrain models. Furthermore, detailed models often do not accurately predict the robot's performance due to model parameter and sensor uncertainty. This thesis presents the development and analysis of a novel method for high speed navigation and hazard …

    mit Repository record for Hazard avoidance for high-speed rough-terrain unmanned ground vehicles (opens in a new tab)

  19. Characterization and Modeling of 4H-SiC Low Voltage MOSFETs and Power MOSFETs

    … as power devices, and power systems will become compact, robust and more efficient. A new low voltage process in 4H-SiC has been characterized and modeled. In order to design circuits with the low voltage process, designers need accurate device models for simulation. Currently, there exist no …

    arkansas Repository record for Characterization and Modeling of 4H-SiC Low Voltage MOSFETs and Power MOSFETs (opens in a new tab)

  20. Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments

    … are designed with a calibrated, wide-temperature compact model. Radiation studies were also performed, and their underlying physics is explored with TCAD models.

    gatech Repository record for Silicon-Germanium Heterojunction Bipolar Transistors for High-Temperature and Radiation-Rich Environments (opens in a new tab)

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