ESD circuit design and measurement techniques

Part 1 of this thesis presents a method to measure sub-nanosecond reverse recovery in wafer-level test structures. The setup uses a transmission line pulse generator with a time domain through connection to measure the device under test current. The setup is then used to measure reverse recovery in a 65 nm CMOS ESD diode, and it is found that a quasi-static compact model does not accurately describe the observed transient. A non-quasi-static charge control model is used to accurately simulate both the reverse recovery and forward bias behavior. Part 2 of this thesis reports the design and fabrication of an active feedback based high-voltage tolerant power clamp with optimally biased positive and negative feedback to bypass the trade-off between ESD performance and mis-trigger immunity. The circuit was fabricated in 28 nm CMOS, and characterization results show a 70% improvement in failure current over previous designs while maintaining mis-trigger immunity.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2020

Author dc:creator

• Ayling, Alex Eben

Contributors dc:contributor

• Rosenbaum, Elyse

• Electrostatic Discharge, Integrated Circuits

Statement dc:rights

• Copyright 2020 Alex Ayling

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/108033

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/108033