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University of Illinois at Urbana-Champaign
On the Analysis, Design, and Modeling of Electrostatic Discharge Protection Devices for Analog and Radio -Frequency Integrated Circuits
Abstract
dc:descriptionWe present a simulator-independent compact model of a vertical npn transistor suitable for ESD circuit simulation. In addition to modeling accurately the high-current and breakdown effects, we also model accurately the small-signal off-state impedance of the device using s-parameter measurements, for inclusion in RF circuit simulations. Experimental results are provided for silicon and SiGe npn transistors.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Joshi, Sopan Ashok
- Contributors dc:contributor
-
- Rosenbaum, Elyse
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3070011
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/80779