Nanowire Zinc Oxide MOSFET Pressure Sensor

Fabrication and characterization of a new kind of pressure sensor using self-assembly Zinc Oxide (ZnO) nanowires on top of the gate of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Self-assembly ZnO nanowires were fabricated with a diameter of 80 nm and 800 nm height (80:8 aspect ratio) on top of the gate of the MOSFET. The sensor showed a 110% response in the drain current due to pressure, even with the expected piezoresistive response of the silicon device removed from the measurement. The pressure sensor was fabricated through low temperature bottom up ultrahigh aspect ratio ZnO nanowire growth using anodic alumina oxide (AAO) templates. The pressure sensor has two main components: MOSFET and ZnO nanowires. Silicon Dioxide growth, photolithography, dopant diffusion, and aluminum metallization were used to fabricate a basic MOSFET. In the other hand, a combination of aluminum anodization, alumina barrier layer removal, ZnO atomic layer deposition (ALD), and wet etching for nanowire release were optimized to fabricate the sensor on a silicon wafer. The ZnO nanowire fabrication sequence presented is at low temperature making it compatible with CMOS technology.

Name thesis:degree_name

Master of Science

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Engineering

Year dc:date.available

2014

Author dc:creator

• Clavijo, William

Contributors dc:contributor

• Gary Atkinson

• AAO
• ZnO
• ALD
• Pressure
• Sensor
• MOSFET
• Alumina
• Engineering

Statement dc:rights

• © The Author

Identifier

https://scholarscompass.vcu.edu/etd/625

OAI identifier oai:identifier

oai:scholarscompass.vcu.edu:etd-1624