Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 322 for “"MOSFET"”.
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Automated MOSFET parameter extraction
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.
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Advanced characterization of 4H-SiC MOSFET channel [Caratterizzazione avanzata del canale 4H-SiC MOSFET]
Lo sviluppo di MOSFET di potenza ad alte prestazioni in carburo di silicio (SiC) rappresenta un passo fondamentale per l'avanzamento della moderna elettronica di potenza. Grazie all'ampio bandgap, all'elevata conducibilità termica e all'alto campo elettrico, il 4H-SiC è emerso come materiale …
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Topics in Mosfet Network Design
Made available in DSpace on 2014-12-13T18:01:56Z (GMT). No. of bitstreams: 1 7714942.pdf: 12030461 bytes, checksum: 224543ea289d5701a64bf17379d6bb95 (MD5) Previous issue date: 1977
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Frei applizierbare MOSFET-Sensorfolie zur Dehnungsmessung
… fracture toughness as well as the sensitivity of MOSFET inversion channels. The results of the investigations were used for the realization of a MOSFET sensor skin. First, a test chip and a chip for strain sensing were designed under the consideration of existing piezoresistive knowledge. The test …
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Nanowire Zinc Oxide MOSFET Pressure Sensor
… Field-Effect Transistor (MOSFET) is presented. Self-assembly ZnO nanowires were fabricated with a diameter of 80 nm and 800 nm height (80:8 aspect ratio) on top of the gate of the MOSFET. The sensor showed a 110% response in the drain current due to pressure, even with the …
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Pulsed MOSFET based linear transformer driver
… is of interest in flash radiography is a power MOSFET. Due to superior switching speeds, repetition rates and modularity, MOSFETs are a strong contender in future pulsed power applications. This thesis focuses on the design of a MOSFET based pulsed power system capable of generating 2.2kV, 200A …
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Simulation of SiC MOSFET Power Converters
… discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter). Different parameters and scenarios were discussed and implemented for both silicon and silicon carbide MOSFET cases. A comparison between same …
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Optimal MOSFET design for low temperature operation
The phenomenal scaling of MOSFET feature size, two orders of magnitude in the past 30 years, has provided the gains in performance and packing density that underlie the GHz microprocessors and 256 MB DRAMs that exist today. Looking forward, the connection between increased performance and smaller …
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Technological Solution beyond MOSFET and Binary Logic Device
… has led the researchers beyond Binary Logic and MOSFET technology. TFET considered as one of the most promising options for low-power application for beyond MOSFET technologies. Graphene Nano Ribbon, due to its high-carrier mobility, tunable bandgap and its outstanding electrostatic control of …
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Characterization, Reliability and Packaging for 300 °C MOSFET
… and higher thermal conductivity. Using SiC, MOSFETs with a theoretical high temperature operation and reliability is achievable. However, current bottlenecks in high temperature SiC MOSFETs lie within the limitations of standard packaging. Additionally, there are reliability issues relating …
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Modeling and realization of an ultra-short channel MOSFET
… field-effect transistor (MOSFET) has made the enormous miniaturization of integrated circuits possible. The answer to the question of how far this miniaturization can be driven is up to now not quite clear. The present thesis introduces a novel scheme for the fabrication of …
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MOSFET-based MMC for low-voltage DC distribution networks
… converter (MMC) with parallel-connected MOSFETs is proposed in this thesis. It allows the converter to operate at relatively high voltage with low harmonic content, without the use of large AC filters. MMC also has low switching frequency, and facilitates the use of MOSFETs with the …
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A Sub-0.1-Micron PtSi Schottky Source/drain MOSFET
The devices are fabricated with lightly doped silicon substrates, 19-A to 34-A gate oxide, $\sim$0.05-$\mu$um gate lithography, 100-A sidewall oxides, self-aligned PtSi, and no intentional doping. The thin gate and sidewall oxides enable high field emission currents at low voltages. These devices …
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Unlocking SiC MOSFET Switching Performance Through Packaging and Instrumentation
Electrical energy conversion is vital to the distribution and use of electricity. With the increased use of renewable energy sources and the move to cleaner electrified transport methods, the demands of power electronic converters and inverters continue to increase. A major component in any power …
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Analysis of hot-carrier AC lifetime model for MOSFET
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
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Extraction of MOSFET doping profiles from device electrical measurements
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
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Performance Analysis of Double Gate MOSFET Using Monte Carlo Simulation
… drain current drive, of the double gate silicon MOSFET device, using MoCa, the Monte Carlo simulator. Drain current performance is analyzed as a result of varying di erent parameters like oxide thickness, dielectric constant, and misalignment of top and bottom gates. An interesting result is …
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