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Showing 1 to 20 of 312 for “"MOSFET"”.

  1. Automated MOSFET parameter extraction

    Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.

    mit Repository record for Automated MOSFET parameter extraction (opens in a new tab)

  2. Advanced characterization of 4H-SiC MOSFET channel [Caratterizzazione avanzata del canale 4H-SiC MOSFET]

    Lo sviluppo di MOSFET di potenza ad alte prestazioni in carburo di silicio (SiC) rappresenta un passo fondamentale per l'avanzamento della moderna elettronica di potenza. Grazie all'ampio bandgap, all'elevata conducibilità termica e all'alto campo elettrico, il 4H-SiC è emerso come materiale …

    catania Repository record for Advanced characterization of 4H-SiC MOSFET channel [Caratterizzazione avanzata del canale 4H-SiC MOSFET] (opens in a new tab)

  3. Topics in Mosfet Network Design

    Made available in DSpace on 2014-12-13T18:01:56Z (GMT). No. of bitstreams: 1 7714942.pdf: 12030461 bytes, checksum: 224543ea289d5701a64bf17379d6bb95 (MD5) Previous issue date: 1977

    uiuc Repository record for Topics in Mosfet Network Design (opens in a new tab)

  4. Nanowire Zinc Oxide MOSFET Pressure Sensor

    … Field-Effect Transistor (MOSFET) is presented. Self-assembly ZnO nanowires were fabricated with a diameter of 80 nm and 800 nm height (80:8 aspect ratio) on top of the gate of the MOSFET. The sensor showed a 110% response in the drain current due to pressure, even with the …

    vcu Repository record for Nanowire Zinc Oxide MOSFET Pressure Sensor (opens in a new tab)

  5. Pulsed MOSFET based linear transformer driver

    … is of interest in flash radiography is a power MOSFET. Due to superior switching speeds, repetition rates and modularity, MOSFETs are a strong contender in future pulsed power applications. This thesis focuses on the design of a MOSFET based pulsed power system capable of generating 2.2kV, 200A …

    strathclyde Repository record for Pulsed MOSFET based linear transformer driver (opens in a new tab)

  6. Simulation of SiC MOSFET Power Converters

    … discusses the use of wide bandgap devices (SiC-MOSFET) in the design and implementation of various power converters (Push-pull inverter, Buck converter). Different parameters and scenarios were discussed and implemented for both silicon and silicon carbide MOSFET cases. A comparison between same …

    denver Repository record for Simulation of SiC MOSFET Power Converters (opens in a new tab)

  7. Optimal MOSFET design for low temperature operation

    The phenomenal scaling of MOSFET feature size, two orders of magnitude in the past 30 years, has provided the gains in performance and packing density that underlie the GHz microprocessors and 256 MB DRAMs that exist today. Looking forward, the connection between increased performance and smaller …

    mit Repository record for Optimal MOSFET design for low temperature operation (opens in a new tab)

  8. Technological Solution beyond MOSFET and Binary Logic Device

    … has led the researchers beyond Binary Logic and MOSFET technology. TFET considered as one of the most promising options for low-power application for beyond MOSFET technologies. Graphene Nano Ribbon, due to its high-carrier mobility, tunable bandgap and its outstanding electrostatic control of …

    umkc Repository record for Technological Solution beyond MOSFET and Binary Logic Device (opens in a new tab)

  9. Characterization, Reliability and Packaging for 300 °C MOSFET

    … and higher thermal conductivity. Using SiC, MOSFETs with a theoretical high temperature operation and reliability is achievable. However, current bottlenecks in high temperature SiC MOSFETs lie within the limitations of standard packaging. Additionally, there are reliability issues relating …

    vt Repository record for Characterization, Reliability and Packaging for 300 °C MOSFET (opens in a new tab)

  10. MOSFET-based MMC for low-voltage DC distribution networks

    … converter (MMC) with parallel-connected MOSFETs is proposed in this thesis. It allows the converter to operate at relatively high voltage with low harmonic content, without the use of large AC filters. MMC also has low switching frequency, and facilitates the use of MOSFETs with the …

    strathclyde Repository record for MOSFET-based MMC for low-voltage DC distribution networks (opens in a new tab)

  11. A Sub-0.1-Micron PtSi Schottky Source/drain MOSFET

    The devices are fabricated with lightly doped silicon substrates, 19-A to 34-A gate oxide, $\sim$0.05-$\mu$um gate lithography, 100-A sidewall oxides, self-aligned PtSi, and no intentional doping. The thin gate and sidewall oxides enable high field emission currents at low voltages. These devices …

    uiuc Repository record for A Sub-0.1-Micron PtSi Schottky Source/drain MOSFET (opens in a new tab)

  12. Unlocking SiC MOSFET Switching Performance Through Packaging and Instrumentation

    Electrical energy conversion is vital to the distribution and use of electricity. With the increased use of renewable energy sources and the move to cleaner electrified transport methods, the demands of power electronic converters and inverters continue to increase. A major component in any power …

    cambridge Repository record for Unlocking SiC MOSFET Switching Performance Through Packaging and Instrumentation (opens in a new tab)

  13. Analysis of hot-carrier AC lifetime model for MOSFET

    Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.

    mit Repository record for Analysis of hot-carrier AC lifetime model for MOSFET (opens in a new tab)

  14. Extraction of MOSFET doping profiles from device electrical measurements

    Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.

    mit Repository record for Extraction of MOSFET doping profiles from device electrical measurements (opens in a new tab)

  15. Performance Analysis of Double Gate MOSFET Using Monte Carlo Simulation

    … drain current drive, of the double gate silicon MOSFET device, using MoCa, the Monte Carlo simulator. Drain current performance is analyzed as a result of varying di erent parameters like oxide thickness, dielectric constant, and misalignment of top and bottom gates. An interesting result is …

    uiuc Repository record for Performance Analysis of Double Gate MOSFET Using Monte Carlo Simulation (opens in a new tab)

  16. Design & optimization of automotive power electronics utilizing FITMOS MOSFET technology

    … functions incorporate electronic controls. MOSFETs are key elements in automotive power electronic circuits and MOSFET characteristics can strongly affect circuit size, cost and performance. Advances in MOSFET technology are thus of great importance to the advancement of automotive …

    mit Repository record for Design & optimization of automotive power electronics utilizing FITMOS MOSFET technology (opens in a new tab)

  17. Effect of MOSFET threshold voltage variation on high-performance circuits

    … that adaptively biases the body terminal of MOSFET devices to control this threshold voltage variation. Based on this model, recommendations on how to effectively use the technique in future technologies will be presented. Second, with threshold voltage scaling, sub-threshold leakage power is …

    mit Repository record for Effect of MOSFET threshold voltage variation on high-performance circuits (opens in a new tab)

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