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State University of New York at Buffalo

High Voltage Gallium Oxide MOSFET for Power Switching Applications

Abstract

dc:description

Ph.D.

Degree

thesis:*
Grantor dc:publisher
State University of New York at Buffalo
Year dc:date
2019

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Zeng, Ke; 0000-0001-5619-6418
Contributors dc:contributor
  • Singisetti, Uttam
  • Electrical Engineering

Subjects

dc:subject × 2

Rights

dc:rights
Statement dc:rights
  • Users of works found in University at Buffalo Institutional Repository (UBIR) are responsible for identifying and contacting the copyright owner for permission to reuse. University at Buffalo Libraries do not manage rights for copyright-protected works and cannot assist with permissions.
  • Copyright retained by author.
Language dc:language
eng

Identifiers

dc:identifier.*
Handle dc:identifier
http://hdl.handle.net/10477/79940
OAI identifier oai:identifier
oai:ubir.buffalo.edu:10477/79940

Chain of custody

source
Harvested from
Buffalo
Base URL
ubir.buffalo.edu/oai/request
Last updated
2026-07-27
Source record
OAI-PMH GetRecord
citation

Zeng, Ke; 0000-0001-5619-6418. High Voltage Gallium Oxide MOSFET for Power Switching Applications. State University of New York at Buffalo, 2019. http://hdl.handle.net/10477/79940