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Showing 1 to 20 of 144 for “"ALD"”.
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DENSE 3D HETEROGENEOUS INTEGRATION USING SELECTIVE COBALT ALD DEPOSITION AND RECONSTITUTED TIERS
… bonding technology using selective Cobalt (Co) ALD deposition is presented. The benefits of selective Co ALD bonding are nanometer-scale controllability, low planarity requirement, low bonding temperature (200 oC) and potential for ultra-high-density bonds. To demonstrate selective Co ALD …
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Electronic Properties of ALD Zinc Oxide Interfaces and its Implication for Chalcopyrite Absorber Materials
… wurde ZnO mittels Atomic Layer Deposition (ALD) gewachsen. ALD hat den Vorteil, dass durch sein selbstlimitierenden Wachstumsmodus einzelne ZnO Monolagen definiert abgeschieden werden können. Dafür wurde eine UHV-kompatible ALD Anlage aufgebaut und in Betrieb genommen. In einem …
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ENGINEERING STRUCTURE AND PHASE VIA TEMPERATURE MANIPULATION IN THIN FILM OXIDES GROWN BY ALD
Atomic Layer Deposition (ALD) is a critical thin film deposition technology with applications spanning microelectronics, solar fuels and biological preservation due to its advantages of a wide precursor library for the majority of the periodic table, exquisite control over growth rates, and the …
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Interface Trap Characterization of ALD-grown Al<sub>2</sub>O<sub>3</sub>/GaN MIS Capacitors
… deposited by atomic layer deposition (ALD) in GaN-based transistors may improve device performance, by reducing gate leakage and passivating surface states, and is receiving great interest. However, little work has been done to characterize interface states and bulk dielectric defects …
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High mobility germanium MOSFETs : study of ozone surface passivation and n-type Dopant channel implants combined with ALD dielectrics
… deposited by atomic layer deposition (ALD). The ozone surface passivation is observed to result in significant mobility enhancement for all devices, with particularly dramatic improvement in the n-FETs compared to devices with no passivation layer. Measurements of interface state …
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An experimental and graph theoretic study of atomic layer deposition processes for spacecraft applications
… understanding of the atomic layer deposition (ALD) process kinetics is necessary for developing new ALD chemistries to produce novel nanomaterials, and also optimization of typical ALD processes used in industrial applications. Proposing a potential reaction sequence alongside with accurate …
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Precursors And Processes For The Growth Of Metallic First Row Transition Metal Films By Atomic Layer Deposition
… devices, atomic layer deposition (ALD) has gained much attention in the recent years. ALD allows the deposition of ultra-thin conformal films with accurate thickness control due to the self-limiting growth mechanism. The microelectronics industry requires the growth of metallic …
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X-Inaktivierung bei heterozygoten Überträgerinnen X-chromosomal gebundener Adrenoleukodystrophie
… Fettsäuren in allen Körperflüssigkeiten führt. X-ALD wird durch Mutationen im ALD-Gen verursacht, welches ein peroxisomales Membranprotein aus der Superfamilie der ABCTransporter (ATP-binding cassette) kodiert. Die Erkrankung führt zu einer fortschreitenden Demyelinisierung des ZNS, einer …
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Surface reaction mechanisms during the atomic layer deposition of silicon-based dielectrics
… highly-conformal (>95%) atomic layer deposition (ALD) of Si-based dielectric films for applications such as sidewall spacers in multiple patterning. In this work, we have primarily focused on understanding the surface reaction mechanisms during the ALD of Si-based dielectric films using in situ …
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Development and physiological characteristics of avian fast and slow contracting muscles
1. The ALD and PLD muscles from the chicken.were studied throughout ex ovo development from 3 days of age until early adulthood. These two muscles provided a model for studying phasic fast fibres and tonic slow fibres. 2. Development over the first 30 days was compared in control groups and groups …
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Atomic layer deposition of photovoltaics
… major challenges. Atomic layer deposition (ALD) is a low processing temperature technique capable of providing unrivalled thin-film conformality with uniform sub-nanometre thickness on large scale areas. Its use in depositing thin charge selective contacts as well as passivation layers in …
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Area selective atomic layer deposition of silicon dioxide on silicon dioxide using surface passivation of copper non-growth surface
… process are required. Atomic layer deposition (ALD) is a thin film deposition technique which provides excellent uniformity, conformality and thickness control at nano scale dimensions. However, ALD processes results in blanket growth over different materials on the entire substrate and hence …
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Dielectric materials by Atomic Layer Deposition for microelectronic applications
The Atomic Layer Deposition (ALD) is an innovative technique to deposit thin film materials for several application fields. The rapid affirmation of the ALD process is related to the peculiarities of the deposition mechanism. In particular, because of the self-limiting principle and of the …
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INVESTIGATION OF PROCESSING-STRUCTURE-PROPERTY RELATIONS IN VAPOR PHASE MODIFIED CELLULOSIC MATERIALS
… amongst batches. Atomic layer deposition (ALD) technique can be conducted at relative lower reaction temperatures (25 – 300 ℃) and realize a conformal coating on substrates with high aspect ratios. Reported literatures on ALD modified cellulose are more focus on functional coatings, …
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ENGINEERING NI/AL2O3 CATALYSTS BY ATOMIC LAYER DEPOSITION FOR METHANE REFORMING
… prepared by atomic layer deposition (ALD) and ALD-prepared ultrathin overcoating (e.g., ZrO<sub>2</sub> and CeO<sub>x</sub>) on Ni/Al<sub>2</sub>O<sub>3</sub> prepared by incipient wetness method were investigated for methane reforming.</p> <p>MgO and CeO<sub>2</sub> prepared by …
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Atomic Layer Deposition of Vanadium Dioxide: Synthesis, Doping, and Device Applications
… VO₂ thin films by atomic layer deposition (ALD), to dope VO₂ films with germanium (Ge) by ALD, and to demonstrate the device applications of ALD VO₂ films. The VO₂ thin films have been deposited onto amorphous substrates by a process of multiple pulsing ALD. A post-deposition annealing …
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The Synthesis, Structure, And Properties Of Group 2 Poly(pyrazolyl)borates And Their Use For The Atomic Layer Deposition Of Group 2 Borates
… for use as group 2 atomic layer deposition (ALD) precursors. In addition, a series of group 2 complexes containing BpR2-based ligand systems were synthesized. Treatment of MI2 (M = Ca, Sr, Ba) with two equivalents of TlBptBu2, KBp, and KBpiPr2 in tetrahydrofuran at ambient temperature …
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Multi-scale modelling of atomic layer deposition
… as a thin film. Atomic layer deposition (ALD) is used practically to deposit high-k materials like HfO2, ZrO2, and Al2O3 as gate oxides. ALD is a technique for producing conformal layers of material with nanometer-scale thickness, used commercially in non-planar electronics and …
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Novel Syntheses and Surface Modifications of Electrode Materials for Superior Lithium-Ion Batteries
… amphoteric oxides via atomic layer deposition (ALD). In the case of ZnO coating, the thickness of ZnO ALD layers can be finely optimized at atomic scale by varying ALD growth cycles. Six ZnO ALD layers demonstrate to have the optimal thickness (~ 1 nm) for the best electrochemical performance of …
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Interfacial Tailoring of Lithium-ion Batteries by Atomic/Molecular Layer Deposition
… problems. </p> <p>Atomic layer deposition (ALD) and molecular layer deposition (MLD) are two important techniques, both proceeding in self-limiting gas-solid reactions and exhibiting excellent capabilities for ultra-thin films, conformal coatings, and controllable growth. They can be …
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