{"id":{"repo_id":"vcu","oai_identifier":"oai:scholarscompass.vcu.edu:etd-1624"},"canonical_url":"https://search.dev.ndltd.org/etd/vcu/oai:scholarscompass.vcu.edu:etd-1624","repository":{"repo_id":"vcu","name":"Virginia Commonwealth University","base_url":"https://scholarscompass.vcu.edu/do/oai/"},"display":{"title":"Nanowire Zinc Oxide MOSFET Pressure Sensor","abstract":"Fabrication and characterization of a new kind of pressure sensor using self-assembly Zinc Oxide (ZnO) nanowires on top of the gate of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Self-assembly ZnO nanowires were fabricated with a diameter of 80 nm and 800 nm height (80:8 aspect ratio) on top of the gate of the MOSFET. The sensor showed a 110% response in the drain current due to pressure, even with the expected piezoresistive response of the silicon device removed from the measurement. The pressure sensor was fabricated through low temperature bottom up ultrahigh aspect ratio ZnO nanowire growth using anodic alumina oxide (AAO) templates. The pressure sensor has two main components: MOSFET and ZnO nanowires. Silicon Dioxide growth, photolithography, dopant diffusion, and aluminum metallization were used to fabricate a basic MOSFET. In the other hand, a combination of aluminum anodization, alumina barrier layer removal, ZnO atomic layer deposition (ALD), and wet etching for nanowire release were optimized to fabricate the sensor on a silicon wafer. The ZnO nanowire fabrication sequence presented is at low temperature making it compatible with CMOS technology.","abstract_html":"Fabrication and characterization of a new kind of pressure sensor using self-assembly Zinc Oxide (ZnO) nanowires on top of the gate of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Self-assembly ZnO nanowires were fabricated with a diameter of 80 nm and 800 nm height (80:8 aspect ratio) on top of the gate of the MOSFET. The sensor showed a 110% response in the drain current due to pressure, even with the expected piezoresistive response of the silicon device removed from the measurement. The pressure sensor was fabricated through low temperature bottom up ultrahigh aspect ratio ZnO nanowire growth using anodic alumina oxide (AAO) templates. The pressure sensor has two main components: MOSFET and ZnO nanowires. Silicon Dioxide growth, photolithography, dopant diffusion, and aluminum metallization were used to fabricate a basic MOSFET. In the other hand, a combination of aluminum anodization, alumina barrier layer removal, ZnO atomic layer deposition (ALD), and wet etching for nanowire release were optimized to fabricate the sensor on a silicon wafer. The ZnO nanowire fabrication sequence presented is at low temperature making it compatible with CMOS technology.","abstract_has_math":false,"creators":["Clavijo, William"],"institution":null,"degree_name":"Master of Science","degree_level":"Thesis","degree_discipline":"Engineering","degree_department":null,"school":null,"contributors":["Gary Atkinson"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-04-30T07:00:00Z","date_published":"2014-04-30T07:00:00Z","updated_at":"2026-07-24T05:54:02Z","subjects":["AAO","ZnO","ALD","Pressure","Sensor","MOSFET","Alumina","Engineering"],"languages":[],"rights":["© The Author"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["https://scholarscompass.vcu.edu/etd/625"],"render_values":[{"text":"https://scholarscompass.vcu.edu/etd/625","href":"https://scholarscompass.vcu.edu/etd/625","code":true}]}]},"links":{"outbound_url":"https://doi.org/10.25772/KGP3-CQ84","outbound_label":"DOI","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Gary Atkinson"]},{"key":"dc:creator","label":"Author","values":["Clavijo, William"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date.available","label":"Dc Date Available","values":["2019-05-14T07:00:00Z"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Master of Science"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["AAO","ZnO","ALD","Pressure","Sensor","MOSFET","Alumina","Engineering"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:rights","label":"Dc Rights","values":["© The Author"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://doi.org/10.25772/KGP3-CQ84","https://scholarscompass.vcu.edu/etd/625"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["Fabrication and characterization of a new kind of pressure sensor using self-assembly Zinc Oxide (ZnO) nanowires on top of the gate of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Self-assembly ZnO nanowires were fabricated with a diameter of 80 nm and 800 nm height (80:8 aspect ratio) on top of the gate of the MOSFET. The sensor showed a 110% response in the drain current due to pressure, even with the expected piezoresistive response of the silicon device removed from the measurement. The pressure sensor was fabricated through low temperature bottom up ultrahigh aspect ratio ZnO nanowire growth using anodic alumina oxide (AAO) templates. The pressure sensor has two main components: MOSFET and ZnO nanowires. Silicon Dioxide growth, photolithography, dopant diffusion, and aluminum metallization were used to fabricate a basic MOSFET. In the other hand, a combination of aluminum anodization, alumina barrier layer removal, ZnO atomic layer deposition (ALD), and wet etching for nanowire release were optimized to fabricate the sensor on a silicon wafer. The ZnO nanowire fabrication sequence presented is at low temperature making it compatible with CMOS technology."]},{"key":"dc:title","label":"Title","values":["Nanowire Zinc Oxide MOSFET Pressure Sensor"]}]}],"canonical_facts":{"dc:contributor":["Gary Atkinson"],"dc:creator":["Clavijo, William"],"dc:date.available":["2019-05-14T07:00:00Z"],"dc:description.abstract":["Fabrication and characterization of a new kind of pressure sensor using self-assembly Zinc Oxide (ZnO) nanowires on top of the gate of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Self-assembly ZnO nanowires were fabricated with a diameter of 80 nm and 800 nm height (80:8 aspect ratio) on top of the gate of the MOSFET. The sensor showed a 110% response in the drain current due to pressure, even with the expected piezoresistive response of the silicon device removed from the measurement. The pressure sensor was fabricated through low temperature bottom up ultrahigh aspect ratio ZnO nanowire growth using anodic alumina oxide (AAO) templates. The pressure sensor has two main components: MOSFET and ZnO nanowires. Silicon Dioxide growth, photolithography, dopant diffusion, and aluminum metallization were used to fabricate a basic MOSFET. In the other hand, a combination of aluminum anodization, alumina barrier layer removal, ZnO atomic layer deposition (ALD), and wet etching for nanowire release were optimized to fabricate the sensor on a silicon wafer. The ZnO nanowire fabrication sequence presented is at low temperature making it compatible with CMOS technology."],"dc:identifier":["https://doi.org/10.25772/KGP3-CQ84","https://scholarscompass.vcu.edu/etd/625"],"dc:rights":["© The Author"],"dc:subject":["AAO","ZnO","ALD","Pressure","Sensor","MOSFET","Alumina","Engineering"],"dc:title":["Nanowire Zinc Oxide MOSFET Pressure Sensor"],"thesis:degree_discipline":["Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["Master of Science"]},"updated_at":"2026-07-24T05:54:02Z"}