Back to results
University of New Mexico
Modeling Ambient Temperature Affected Photovoltaic Inverter IGBT Lifetimes With Rainflow Analysis
Abstract
dc:description.abstractThis manuscript details the modeling performed towards estimating lifetimes of IGBTs in PV inverters. Specifically, ambient temperature, solar irradiance, and load demand for a duration of a year were considered in modeling for a chosen integrated gate bipolar transistor (IGBT) from International Rectifier. Two cases were considered in the modeling, yielding lifetimes of 29.1 years and 4.49 years. Mean time to failures (MTTF) were calculated for an H-bridge topology inverter with four IGBTs for both cases as 7.27 and 1.22 years, respectively.
Degree
thesis:*- Name thesis:degree_name
- Electrical Engineering
- Level thesis:degree_level
- Thesis
- Discipline thesis:degree_discipline
- Electrical and Computer Engineering
- Year
- 2016
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Borders, Richard A.
- Contributors dc:contributor
-
- Lavrova, Olga
- Lehr, Jane
- Graham, Edward
Subjects
dc:subject × 7Rights
- Language dc:language
- English
Identifiers
dc:identifier.*- Repository record dc:identifier
- https://digitalrepository.unm.edu/ece_etds/37
- OAI identifier oai:identifier
- oai:digitalrepository.unm.edu:ece_etds-1036