Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 50 for “"Bipolar Transistor"”.
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Compound Semiconductor Power Heterojunction Bipolar Transistor Technology
This work will conclude by discussing the lingering issues with the GaN project and the methods in which to solve these issues. It will also discuss the implications of the power amplifier analysis.
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The AlInP material system in heterojunction bipolar transistor technology
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
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VHF bipolar transistor power amplifiers: measurement, modeling, and design
… technique for VHF linear power amplifiers using bipolar junction transistors is presented in this report. This design technique is simple in its application but yields accurate results. The design technique is based upon a transistor model which is simple enough to be useful for design, but which …
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Insulated gate bipolar transistor (IGBT) simulation using IG-Spice
A physics-based insulated gate bipolar transistor (IGBT) model has been successfully implemented into a widely available circuit simulation package, IG-Spice. Based on the semiconductor physics, the model accurately predicts the nonlinear junction capacitance variations, recombinations, and …
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The Clustered Insulated Gate Bipolar Transistor (CIGBT) — from concept to manufacturing
… power device called Clustered Insulated Gate Bipolar Transistor (CIGBT) is developed from concept to a pre-manufacturing product. The CIGBT uses MOS gate control over a thyristor action to achieve low conduction losses. A “Capacitive” turn-on mechanism ensures a smooth turn on of the device …
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Investigation of the tunneling emitter bipolar transistor as spin-injector into silicon
In this thesis is discussed the tunneling emitter bipolar transistor as a possible spin-injector into silicon. The transistor has a metallic emitter which as a spin-injector will be a ferromagnet. Spin-polarized electrons from the ferromagnet tunnel directly into the conduction band of the base of …
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Characterization of thermal dissipation within integrated gate bipolar transistor (IGBT) layered packaging structure
Integrated Gate Bipolar Transistors (IGBTs) generally have a high output power and generate significant amounts of heat, which needs to be removed from the chip to ensure continued operation. Since IGBT chips are commonly mounted on a layered assembly structure which is in turn mounted onto a heat …
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Physical modeling of base carrier lifetime and frequency response of heterojunction bipolar transistor
… modeling of the quantum-well heterojunction bipolar transistor, known as the transistor laser. By revising the conventional bipolar junction transistor charge control model, this work accounts for the degraded base transfer ratio, which contrasts with the constant base transport factor close …
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Design, Fabrication and Characterization of a GaAs/InxGa1-xAs/GaAs Heterojunction Bipolar Transistor
… for PnP GaAs/InxGa1-xAs/GaAs heterojunction bipolar transistors (HBTs) are proposed and simulated with the aid of commercial software. Band diagrams, Gummel plots and common emitter characteristics are shown for the specific case of x=1, x=0.7, and x linearly graded from 0.75 to 0.7. Of the …
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A heterojunction bipolar transistor with stepwise allog-graded base : analysis, design, fabrication, and characterization
(cont.) features but the device self-heating turned out to be crucial for the longevity of the base micro-airbridges. The short lifetime of the base micro-airbridges was prohibitive for the realization of high frequency measurements. This work serves as the foundation for the implementation of …
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The design, analysis and characterization of high-performance heterostructure bipolar transistors
… of design issues concerning the heterostructure bipolar transistor. The use of semiconductors with differing energy gaps in the bipolar transistor offers advantages over homojunction bipolar transistors in the ability to construct these bandgap differences such that carrier flow can be either …
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A Comprehensive Study of Safe-Operating-Area, Biasing Constraints, and Breakdown in Advanced SiGe HBTs
… silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration in SiGe HBTs from …
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Modeling and Characterization of Heterojunction Bipolar Transistors
Heterojunction bipolar transistor (HBTs) offer several advantages over their homo-junction counterparts resulting from the use of semiconductors in the emitter and base with different bandgaps. These advantages include high current gain, large cut-off frequency and short gate delay in digital logic …
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Analysis of and process development for high-frequency indium gallium phosphide/gallium arsenide heterojunction bipolar transistors
… has been investigated for use in heterojunction bipolar transistor applications. This material possesses several properties which make it attractive as a potential replacement for AlGaAs as the wide band gap emitter material. These properties include the availability of highly selective etches, …
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Modeling Ambient Temperature Affected Photovoltaic Inverter IGBT Lifetimes With Rainflow Analysis
… in modeling for a chosen integrated gate bipolar transistor (IGBT) from International Rectifier. Two cases were considered in the modeling, yielding lifetimes of 29.1 years and 4.49 years. Mean time to failures (MTTF) were calculated for an H-bridge topology inverter with four IGBTs for …
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Inverter Dynamic Electro-Thermal Simulation with Experimental Verification
… over temperature for the insulated gate bipolar transistor (IGBT) and diode electro-thermal models. A thermal network methodology that includes thermal coupling between devices is applied to a six-pack module package containing multiple IGBT and diode chips. The electro-thermal device …
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Compact device modeling and millimeter-wave oscillator design for III-V HBT technology
The double heterojunction bipolar transistor (DHBT), through its bandgap engineering, possesses several very favorable traits that allow it to operate at high frequencies while still maintaining impressive breakdown, linearity, and current driving characteristics. These traits make it a highly …
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DC and AC modeling of heterostructure bipolar transistors (HBTS)
… with a homojunction or graded heterojunction bipolar transistor, a complete model for the dc and ac performances of the device is developed based on the Ebers-Moll methodology. The formulation is modified to include the abrupt single HBT, by introducing the effects of the conduction band …
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High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications
Heterojunction bipolar transistors (HBTs) are widely used in high-speed mixed-signal, radio frequency, and communication ICs because of their high speed, high breakdown voltage, and high efficiency capabilities compared with Si bipolar junction transistors (BJTs) and complementary metal-oxide …
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Analysis and design of low-noise amplifiers in silicon-germanium hetrojunction bipolar technology for radar and communication systems
… Silicon-Germanium Hetro-Junction Bipolar Transistor (SiGe HBT) low-noise amplifiers (LNAs). The LNA design trade-off space is presented and methods for achieving an optimized design are discussed. In Chapter 1, we review the importance of LNAs and the benefits of SiGe HBT …
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