Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 71 for “"IGBT"”.
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Reduction of Switching Losses in IGBT Power Modules
… diverse strategie di ottimizzazione per pilotare IGBT e proporre una nuova tecnica. In applicazioni di potenza una particolare attenzione deve essere posta per fenomeni come le perdite di commutazione , sovracorrenti in accensione e sovratensione allo spegnimento dei dispositivi . Questi fenomeni …
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In situ power-loss estimation of IGBT modules
… method for insulated-gate bipolar transistors (IGBTs) has been improved over the past decades to reduce system downtime. In situ lifetime estimation of IGBT modules has been challenging due to a number of requirements: the necessity to operate at high voltage in the switching environment and the …
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Insulated gate bipolar transistor (IGBT) simulation using IG-Spice
… physics-based insulated gate bipolar transistor (IGBT) model has been successfully implemented into a widely available circuit simulation package, IG-Spice. Based on the semiconductor physics, the model accurately predicts the nonlinear junction capacitance variations, recombinations, and …
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CCM Totem Pole Bridgeless PFC with Ultra Fast IGBT
… the CCM high power condition. As the ultra-fast IGBT which is capable of providing 100 kHz switching frequency is available in the market, it is possible to apply the totem pole PFC in CCM high power condition. The thesis provides a method by implementing the ultra-fast IGBT and SiC diode to …
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Modeling Ambient Temperature Affected Photovoltaic Inverter IGBT Lifetimes With Rainflow Analysis
… performed towards estimating lifetimes of IGBTs in PV inverters. Specifically, ambient temperature, solar irradiance, and load demand for a duration of a year were considered in modeling for a chosen integrated gate bipolar transistor (IGBT) from International Rectifier. Two cases were …
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Four-Output Isolated Power Supply for the Application of IGBT Gate Drive
This thesis focuses on the design issues of the multiple-output boost full-bridge converter, which is constructed by cascading the boost regulator with the inductor-less full-bridge converter. The design of the boost regulator has been proposed briefly with component selection and compensator …
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Characterization of thermal dissipation within integrated gate bipolar transistor (IGBT) layered packaging structure
Integrated Gate Bipolar Transistors (IGBTs) generally have a high output power and generate significant amounts of heat, which needs to be removed from the chip to ensure continued operation. Since IGBT chips are commonly mounted on a layered assembly structure which is in turn mounted onto a heat …
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Electrical and Thermal Characterizations of IGBT Module with Pressure-Free Large-Area Sintered Joints
… 13.5 mm2 (a chip size of one kind of commercial IGBT) by pressure-free sintering of nano-silver paste. Another objective was to fabricate high-power (1200 V and 150 A) multi-chip module by pressure-free sintering. In each module (half-bridge), two IGBT dies (13.5 x 13.5 mm2) and two diode dies …
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Junction temperature estimation via plug-in system for the design validation of IGBT industrial power converters
L'abstract è presente nell'allegato / the abstract is in the attachment
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High Bandwidth Rogowski Coils, Commutation Loop Stray Inductance, and the Si IGBT and the SiC MOSFET Based Hybrid Concept
… and the insulated-gate bipolar transistor (IGBT), deepening the reader’s understanding of these essential components in power electronics. It then focuses on the current commutation loop inductance, underscoring the importance of minimising this parameter to optimise the design and …
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High Efficiency IGBTs through Novel Three-Dimensional Modelling and New Architectures
New Insulated Gate Bipolar Transistor (IGBT) designs are reliant on simulation tools, such as Sentaurus technology computer-aided design (TCAD) models, which allow for rapid device development that could not be achieved by manufacturing prototypes due to the cost and time associated with …
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Turn-Off Voltage Sharing of Field-Stop IGBTs in Series Connection under Inductive Load Conditions
… Silicon (Si) Insulated Gate Bipolar Transistors (IGBTs) in series connection is attractive to many power electronic applications, including converters, hybrid circuit breakers, etc. To operate IGBTs in series connection, regulating the voltage sharing between the IGBTs during the IGBT turn-off is …
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Inverter Dynamic Electro-Thermal Simulation with Experimental Verification
… for the insulated gate bipolar transistor (IGBT) and diode electro-thermal models. A thermal network methodology that includes thermal coupling between devices is applied to a six-pack module package containing multiple IGBT and diode chips. The electro-thermal device models and six-pack …
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Behavioral Modelling of the Transient and CdV/dt Induced Turn-on of a Hybrid High Power Switch Unit
… An emerging strategy is to combine high power Si IGBTs with SiC MOSFETs to take advantage of the SiC MOSFETs superior switching speed and lower switching losses. While this approach has a number of advantages, when it is used in a half bridge arrangement the possibility of false turn becomes a …
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Single-switch three-phase zero-current-transition rectifier with power factor correction
… switch. The circuit can be used with an IGBT at switching frequencies up to 50. Its operation is analyzed in detail, and design guidelines are provided. The small signal model of the circuit is developed, and voltage mode control is designed. The results are verified on a 4 kW, 50 kHz, …
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Measuring Level of Degradation in Power Semiconductor Devices using Emerging Techniques
… as insulated-gate bipolar junction transistors (IGBTs) and metal-oxide semiconductor field-effect transistors (MOSFETs) are constantly monitored to predict when and how they might fail. A huge fraction of research efforts involves the study of power electronic device reliability and development …
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Novel Power Semiconductor Devices and Technologies
… Switched Thyristor (ALEST) and the Clustered IGBT (CIGBT). Furthermore the insight into the principles of operation and modern optimisation techniques of fast recover diodes, IGBT’s and MOS gated thyristors are also considered. 1200V and 1700V fast recovery diodes are developed employing the …
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The Design of an Asic Control Chip for a Forward Active Clamp Converter and the Investigation of Integratable Lateral Power Devices
… are discussed and simulated, including lateral IGBT, lateral MCT and double gate lateral MCTs. It is shown that lateral IGBT and lateral MCTs are good candidates for power IC applications.
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Design and fabrication of Emitter Controlled Thyristor
… A novel ECT structure that utilizes IGBT compatible fabrication process was proposed. The emitter short FET, emitter switch FET and turn-on FET are all integrated with a high voltage thyristor. Numerical simulation results show that the ECT has a better conductivity modulation than …
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Design and Fabrication of the Emitter Controlled Thyristor
… A novel ECT structure that utilizes IGBT compatible fabrication process was proposed. The emitter short FET, emitter switch FET and turn-on FET are all integrated with a high voltage thyristor. Numerical simulation results show that the ECT has a better conductivity modulation than …
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