{"id":{"repo_id":"unm","oai_identifier":"oai:digitalrepository.unm.edu:ece_etds-1036"},"canonical_url":"https://search.dev.ndltd.org/etd/unm/oai:digitalrepository.unm.edu:ece_etds-1036","repository":{"repo_id":"unm","name":"University of New Mexico","base_url":"https://digitalrepository.unm.edu/do/oai/"},"display":{"title":"Modeling Ambient Temperature Affected Photovoltaic Inverter IGBT Lifetimes With Rainflow Analysis","abstract":"This manuscript details the modeling performed towards estimating lifetimes of IGBTs in PV inverters. Specifically, ambient temperature, solar irradiance, and load demand for a duration of a year were considered in modeling for a chosen integrated gate bipolar transistor (IGBT) from International Rectifier. Two cases were considered in the modeling, yielding lifetimes of 29.1 years and 4.49 years. Mean time to failures (MTTF) were calculated for an H-bridge topology inverter with four IGBTs for both cases as 7.27 and 1.22 years, respectively.","abstract_html":"This manuscript details the modeling performed towards estimating lifetimes of IGBTs in PV inverters. Specifically, ambient temperature, solar irradiance, and load demand for a duration of a year were considered in modeling for a chosen integrated gate bipolar transistor (IGBT) from International Rectifier. Two cases were considered in the modeling, yielding lifetimes of 29.1 years and 4.49 years. Mean time to failures (MTTF) were calculated for an H-bridge topology inverter with four IGBTs for both cases as 7.27 and 1.22 years, respectively.","abstract_has_math":false,"creators":["Borders, Richard A."],"institution":null,"degree_name":"Electrical Engineering","degree_level":"Thesis","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Lavrova, Olga","Lehr, Jane","Graham, Edward"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2016,"date_issued":"2016-06-09T07:00:00Z","date_published":"2016-06-09T07:00:00Z","updated_at":"2026-07-24T05:27:10Z","subjects":["IGBT","rainflow","solar","inverter","photovoltaic","lifetime","irradiance"],"languages":["English"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"https://digitalrepository.unm.edu/ece_etds/37","outbound_label":"Repository record","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Lavrova, Olga","Lehr, Jane","Graham, Edward"]},{"key":"dc:creator","label":"Author","values":["Borders, Richard A."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis","Masters"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Electrical Engineering"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["IGBT","rainflow","solar","inverter","photovoltaic","lifetime","irradiance"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["English"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["https://digitalrepository.unm.edu/ece_etds/37"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description.abstract","label":"Abstract","values":["This manuscript details the modeling performed towards estimating lifetimes of IGBTs in PV inverters. Specifically, ambient temperature, solar irradiance, and load demand for a duration of a year were considered in modeling for a chosen integrated gate bipolar transistor (IGBT) from International Rectifier. Two cases were considered in the modeling, yielding lifetimes of 29.1 years and 4.49 years. Mean time to failures (MTTF) were calculated for an H-bridge topology inverter with four IGBTs for both cases as 7.27 and 1.22 years, respectively."]},{"key":"dc:title","label":"Title","values":["Modeling Ambient Temperature Affected Photovoltaic Inverter IGBT Lifetimes With Rainflow Analysis"]}]}],"canonical_facts":{"dc:contributor":["Lavrova, Olga","Lehr, Jane","Graham, Edward"],"dc:creator":["Borders, Richard A."],"dc:description.abstract":["This manuscript details the modeling performed towards estimating lifetimes of IGBTs in PV inverters. Specifically, ambient temperature, solar irradiance, and load demand for a duration of a year were considered in modeling for a chosen integrated gate bipolar transistor (IGBT) from International Rectifier. Two cases were considered in the modeling, yielding lifetimes of 29.1 years and 4.49 years. Mean time to failures (MTTF) were calculated for an H-bridge topology inverter with four IGBTs for both cases as 7.27 and 1.22 years, respectively."],"dc:identifier":["https://digitalrepository.unm.edu/ece_etds/37"],"dc:language":["English"],"dc:subject":["IGBT","rainflow","solar","inverter","photovoltaic","lifetime","irradiance"],"dc:title":["Modeling Ambient Temperature Affected Photovoltaic Inverter IGBT Lifetimes With Rainflow Analysis"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Thesis","Masters"],"thesis:degree_name":["Electrical Engineering"]},"updated_at":"2026-07-24T05:27:10Z"}