2D material devices for low power logic and memory applications

This thesis investigates low power tunneling field effect transistors (task 1) and low power ferroelectric memory devices (task 2) based on two-dimensional (2D) materials. In the first task, electrical characteristics of mechanically exfoliated n-type Molybdenum Disulfide (MoS2 ) and a new p-type material Germanium Selenide (GeSe) were investigated. The pn junctions based on GeSe/MoS2 heterostructures were fabricated and showed excellent rectifying characteristics, demonstrating for the first time the viability of using GeSe/MoS2 heterostructures as 2D pn junctions. In the second project, 2D material ferroelectric field effect transistors (FeFETs), with MoS2 as the channel material and doped Hafnium Oxide (HfO2) as the ferroelectric gate dielectrics were explored. The electrical characteristics revealed a ferroelectric memory window, and effects associated with ferroelectric materials such as the wake-up effect and polarization fatigue were observed. Future research in both projects can potentially lead to advances of 2D materials in low power logic and memory applications.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2017

Author dc:creator

• Yap, Wui Chung

Contributors dc:contributor

• Zhu, Wenjuan

• 2D materials
• Low power

Statement dc:rights

• Copyright 2016 Wui Chung Yap

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/95528

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/95528