{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/95528"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/95528","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"2D material devices for low power logic and memory applications","abstract":"This thesis investigates low power tunneling field effect transistors (task 1) and low power ferroelectric memory devices (task 2) based on two-dimensional (2D) materials. In the first task, electrical characteristics of mechanically exfoliated n-type Molybdenum Disulfide (MoS2 ) and a new p-type material Germanium Selenide (GeSe) were investigated. The pn junctions based on GeSe/MoS2 heterostructures were fabricated and showed excellent rectifying characteristics, demonstrating for the first time the viability of using GeSe/MoS2 heterostructures as 2D pn junctions. In the second project, 2D material ferroelectric field effect transistors (FeFETs), with MoS2 as the channel material and doped Hafnium Oxide (HfO2) as the ferroelectric gate dielectrics were explored. The electrical characteristics revealed a ferroelectric memory window, and effects associated with ferroelectric materials such as the wake-up effect and polarization fatigue were observed. Future research in both projects can potentially lead to advances of 2D materials in low power logic and memory applications.","abstract_html":"This thesis investigates low power tunneling field effect transistors (task 1) and low power ferroelectric memory devices (task 2) based on two-dimensional (2D) materials. In the first task, electrical characteristics of mechanically exfoliated n-type Molybdenum Disulfide (MoS2 ) and a new p-type material Germanium Selenide (GeSe) were investigated. The pn junctions based on GeSe/MoS2 heterostructures were fabricated and showed excellent rectifying characteristics, demonstrating for the first time the viability of using GeSe/MoS2 heterostructures as 2D pn junctions. In the second project, 2D material ferroelectric field effect transistors (FeFETs), with MoS2 as the channel material and doped Hafnium Oxide (HfO2) as the ferroelectric gate dielectrics were explored. The electrical characteristics revealed a ferroelectric memory window, and effects associated with ferroelectric materials such as the wake-up effect and polarization fatigue were observed. Future research in both projects can potentially lead to advances of 2D materials in low power logic and memory applications.","abstract_has_math":false,"creators":["Yap, Wui Chung"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Zhu, Wenjuan"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2017,"date_issued":"2017-03-01T16:37:14Z","date_published":"2017-03-01T16:37:14Z","updated_at":"2026-07-22T22:26:37Z","subjects":["2D materials","Low power"],"languages":["en"],"rights":["Copyright 2016 Wui Chung Yap"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/95528","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Zhu, Wenjuan"]},{"key":"dc:creator","label":"Author","values":["Yap, Wui Chung"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2017-03-01T16:37:14Z","2019-03-02T10:15:07Z","2016-07-14","2016-12"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["2D materials","Low power"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2016 Wui Chung Yap"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/95528"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This thesis investigates low power tunneling field effect transistors (task 1) and low power ferroelectric memory devices (task 2) based on two-dimensional (2D) materials. In the first task, electrical characteristics of mechanically exfoliated n-type Molybdenum Disulfide (MoS2 ) and a new p-type material Germanium Selenide (GeSe) were investigated. The pn junctions based on GeSe/MoS2 heterostructures were fabricated and showed excellent rectifying characteristics, demonstrating for the first time the viability of using GeSe/MoS2 heterostructures as 2D pn junctions. In the second project, 2D material ferroelectric field effect transistors (FeFETs), with MoS2 as the channel material and doped Hafnium Oxide (HfO2) as the ferroelectric gate dielectrics were explored. The electrical characteristics revealed a ferroelectric memory window, and effects associated with ferroelectric materials such as the wake-up effect and polarization fatigue were observed. Future research in both projects can potentially lead to advances of 2D materials in low power logic and memory applications.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2018-12-01","The student, Wui Chung Yap, accepted the attached license on 2016-07-13 at 11:08.","The student, Wui Chung Yap, submitted this Thesis for approval on 2016-07-13 at 11:18.","This Thesis was approved for publication on 2016-07-14 at 11:45.","DSpace SAF Submission Ingestion Package generated from Vireo submission #9918 on 2017-02-28 at 14:35:26","Made available in DSpace on 2017-03-01T16:37:14Z (GMT). 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In the first task, electrical characteristics of mechanically exfoliated n-type Molybdenum Disulfide (MoS2 ) and a new p-type material Germanium Selenide (GeSe) were investigated. The pn junctions based on GeSe/MoS2 heterostructures were fabricated and showed excellent rectifying characteristics, demonstrating for the first time the viability of using GeSe/MoS2 heterostructures as 2D pn junctions. In the second project, 2D material ferroelectric field effect transistors (FeFETs), with MoS2 as the channel material and doped Hafnium Oxide (HfO2) as the ferroelectric gate dielectrics were explored. The electrical characteristics revealed a ferroelectric memory window, and effects associated with ferroelectric materials such as the wake-up effect and polarization fatigue were observed. Future research in both projects can potentially lead to advances of 2D materials in low power logic and memory applications.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2018-12-01","The student, Wui Chung Yap, accepted the attached license on 2016-07-13 at 11:08.","The student, Wui Chung Yap, submitted this Thesis for approval on 2016-07-13 at 11:18.","This Thesis was approved for publication on 2016-07-14 at 11:45.","DSpace SAF Submission Ingestion Package generated from Vireo submission #9918 on 2017-02-28 at 14:35:26","Made available in DSpace on 2017-03-01T16:37:14Z (GMT). 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