Global ETD Search

IMPROVING THE HAFNIA-BASED RESISTIVE RANDOM-ACCESS MEMORY THROUGH MATERAL ENGINEERING

CHEN ZHIXIAN2016

… CYCLE TO CYCLE. THIS EFFECTIVELY REDUCES THE MEMORY WINDOW BETWEEN THE HIGH AND LOW RESISTANCE STATES AND COULD POSSIBLY RESULT IN BIT ERRORS. THIS THESIS AIMS TO ADDRESS THE ISSUE OF LARGE RESISTANCE VARIATION IN HFO2-BASED REDOX RRAMS BY INCREASING THE MEMORY WINDOW AND/OR REDUCING THE …

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2D material devices for low power logic and memory applications

Yap, Wui ChungUniversity of Illinois at Urbana-Champaign2017

… transistors (task 1) and low power ferroelectric memory devices (task 2) based on two-dimensional (2D) materials. In the first task, electrical characteristics of mechanically exfoliated n-type Molybdenum Disulfide (MoS2 ) and a new p-type material Germanium Selenide (GeSe) were investigated. The …

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Design and Simulation of Short Channel Si:HfO2 Ferroelectric Field Effect Transistor (FeFET)

Smaili, Idris H

rit Repository record for Design and Simulation of Short Channel Si:HfO2 Ferroelectric Field Effect Transistor (FeFET) (opens in a new tab)