Characterization of the photochemical etching process: an alternative microfluidic device fabrication method

A newly developed process known as photochemical etching (PC etching), which combines optical imaging and wet chemical etching, can be utilized as an alternative to fabricate the master mold of a microfluidic device. During this process, a semiconductor substrate is submerged in an etchant solution. Structures are then etched into its surface based on the image formed by a commercial projector. Once characterized and optimized, PC etching could reduce or eliminate the iterative, costly process associated with conventional microfluidic device fabrication methods, according to C. Edwards et al. (2013). The PC etching method will potentially reduce overall costs by: (1) replacing expensive lithography mask design software with easily accessible Microsoft PowerPoint, (2) eliminating reliance on multiple lithography masks through virtual mask incorporation, and (3) eliminating the need for cleanroom use by relying on a projector- based optical setup that can be housed in any classroom or laboratory. PC etching optimization consists of analyzing etching parameter values in order to develop a recipe that provides the highest resolution of etched features. This thesis seeks to examine the topic of PC etching optimization by providing an in-depth analysis of how varying operator parameters such as etchant concentration, etchant type, illumination color and intensity, etch duration, and current density affect the resolution of photo-chemically etched GaAs devices.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2017

Author dc:creator

• Edwards, Lonna D

Contributors dc:contributor

• Goddard, Lynford
• Liu, Logan

• photochemical etching
• microfluidic device
• wet chemical etching
• gallium arsenide
• semiconductor

Statement dc:rights

• Copyright 2016 Lonna Edwards

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/95516

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/95516