{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/95516"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/95516","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Characterization of the photochemical etching process: an alternative microfluidic device fabrication method","abstract":"A newly developed process known as photochemical etching (PC etching), which combines optical imaging and wet chemical etching, can be utilized as an alternative to fabricate the master mold of a microfluidic device. During this process, a semiconductor substrate is submerged in an etchant solution. Structures are then etched into its surface based on the image formed by a commercial projector. Once characterized and optimized, PC etching could reduce or eliminate the iterative, costly process associated with conventional microfluidic device fabrication methods, according to C. Edwards et al. (2013). The PC etching method will potentially reduce overall costs by: (1) replacing expensive lithography mask design software with easily accessible Microsoft PowerPoint, (2) eliminating reliance on multiple lithography masks through virtual mask incorporation, and (3) eliminating the need for cleanroom use by relying on a projector- based optical setup that can be housed in any classroom or laboratory. PC etching optimization consists of analyzing etching parameter values in order to develop a recipe that provides the highest resolution of etched features. This thesis seeks to examine the topic of PC etching optimization by providing an in-depth analysis of how varying operator parameters such as etchant concentration, etchant type, illumination color and intensity, etch duration, and current density affect the resolution of photo-chemically etched GaAs devices.","abstract_html":"A newly developed process known as photochemical etching (PC etching), which combines optical imaging and wet chemical etching, can be utilized as an alternative to fabricate the master mold of a microfluidic device. During this process, a semiconductor substrate is submerged in an etchant solution. Structures are then etched into its surface based on the image formed by a commercial projector. Once characterized and optimized, PC etching could reduce or eliminate the iterative, costly process associated with conventional microfluidic device fabrication methods, according to C. Edwards et al. (2013). The PC etching method will potentially reduce overall costs by: (1) replacing expensive lithography mask design software with easily accessible Microsoft PowerPoint, (2) eliminating reliance on multiple lithography masks through virtual mask incorporation, and (3) eliminating the need for cleanroom use by relying on a projector- based optical setup that can be housed in any classroom or laboratory. PC etching optimization consists of analyzing etching parameter values in order to develop a recipe that provides the highest resolution of etched features. This thesis seeks to examine the topic of PC etching optimization by providing an in-depth analysis of how varying operator parameters such as etchant concentration, etchant type, illumination color and intensity, etch duration, and current density affect the resolution of photo-chemically etched GaAs devices.","abstract_has_math":false,"creators":["Edwards, Lonna D"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Goddard, Lynford","Liu, Logan"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2017,"date_issued":"2017-03-01T16:37:09Z","date_published":"2017-03-01T16:37:09Z","updated_at":"2026-07-22T22:26:37Z","subjects":["photochemical etching","microfluidic device","wet chemical etching","gallium arsenide","semiconductor"],"languages":["en"],"rights":["Copyright 2016 Lonna Edwards"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/95516","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Goddard, Lynford","Liu, Logan"]},{"key":"dc:creator","label":"Author","values":["Edwards, Lonna D"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2017-03-01T16:37:09Z","2019-03-02T10:15:24Z","2016-12-07","2016-12"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["photochemical etching","microfluidic device","wet chemical etching","gallium arsenide","semiconductor"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2016 Lonna Edwards"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/95516"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["A newly developed process known as photochemical etching (PC etching), which combines optical imaging and wet chemical etching, can be utilized as an alternative to fabricate the master mold of a microfluidic device. During this process, a semiconductor substrate is submerged in an etchant solution. Structures are then etched into its surface based on the image formed by a commercial projector. Once characterized and optimized, PC etching could reduce or eliminate the iterative, costly process associated with conventional microfluidic device fabrication methods, according to C. Edwards et al. (2013). The PC etching method will potentially reduce overall costs by: (1) replacing expensive lithography mask design software with easily accessible Microsoft PowerPoint, (2) eliminating reliance on multiple lithography masks through virtual mask incorporation, and (3) eliminating the need for cleanroom use by relying on a projector- based optical setup that can be housed in any classroom or laboratory. PC etching optimization consists of analyzing etching parameter values in order to develop a recipe that provides the highest resolution of etched features. This thesis seeks to examine the topic of PC etching optimization by providing an in-depth analysis of how varying operator parameters such as etchant concentration, etchant type, illumination color and intensity, etch duration, and current density affect the resolution of photo-chemically etched GaAs devices.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2018-12-01","The student, Lonna Edwards, accepted the attached license on 2016-12-06 at 16:51.","The student, Lonna Edwards, submitted this Thesis for approval on 2016-12-06 at 17:09.","This Thesis was approved for publication on 2016-12-07 at 14:54.","DSpace SAF Submission Ingestion Package generated from Vireo submission #10460 on 2017-02-28 at 14:37:21","Made available in DSpace on 2017-03-01T16:37:09Z (GMT). No. of bitstreams: 2 EDWARDS-THESIS-2016.pdf: 91085060 bytes, checksum: e192c058c91365cb045bf14769ee2453 (MD5) LICENSE.txt: 4210 bytes, checksum: 7597883e2b1e38a206be9f1695104c09 (MD5) Previous issue date: 2016-12-07","Embargo set by: Seth Robbins for item 98632 Lift date: 2019-03-01T16:37:19Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only Restriction Lifted for Item 98632 on 2019-03-02T10:15:24Z."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Characterization of the photochemical etching process: an alternative microfluidic device fabrication method"]}]}],"canonical_facts":{"dc:contributor":["Goddard, Lynford","Liu, Logan"],"dc:creator":["Edwards, Lonna D"],"dc:date":["2017-03-01T16:37:09Z","2019-03-02T10:15:24Z","2016-12-07","2016-12"],"dc:description":["A newly developed process known as photochemical etching (PC etching), which combines optical imaging and wet chemical etching, can be utilized as an alternative to fabricate the master mold of a microfluidic device. During this process, a semiconductor substrate is submerged in an etchant solution. Structures are then etched into its surface based on the image formed by a commercial projector. Once characterized and optimized, PC etching could reduce or eliminate the iterative, costly process associated with conventional microfluidic device fabrication methods, according to C. Edwards et al. (2013). The PC etching method will potentially reduce overall costs by: (1) replacing expensive lithography mask design software with easily accessible Microsoft PowerPoint, (2) eliminating reliance on multiple lithography masks through virtual mask incorporation, and (3) eliminating the need for cleanroom use by relying on a projector- based optical setup that can be housed in any classroom or laboratory. PC etching optimization consists of analyzing etching parameter values in order to develop a recipe that provides the highest resolution of etched features. This thesis seeks to examine the topic of PC etching optimization by providing an in-depth analysis of how varying operator parameters such as etchant concentration, etchant type, illumination color and intensity, etch duration, and current density affect the resolution of photo-chemically etched GaAs devices.","Submission published under a 24 month embargo labeled 'U of I Access', the embargo will last until 2018-12-01","The student, Lonna Edwards, accepted the attached license on 2016-12-06 at 16:51.","The student, Lonna Edwards, submitted this Thesis for approval on 2016-12-06 at 17:09.","This Thesis was approved for publication on 2016-12-07 at 14:54.","DSpace SAF Submission Ingestion Package generated from Vireo submission #10460 on 2017-02-28 at 14:37:21","Made available in DSpace on 2017-03-01T16:37:09Z (GMT). No. of bitstreams: 2 EDWARDS-THESIS-2016.pdf: 91085060 bytes, checksum: e192c058c91365cb045bf14769ee2453 (MD5) LICENSE.txt: 4210 bytes, checksum: 7597883e2b1e38a206be9f1695104c09 (MD5) Previous issue date: 2016-12-07","Embargo set by: Seth Robbins for item 98632 Lift date: 2019-03-01T16:37:19Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only Restriction Lifted for Item 98632 on 2019-03-02T10:15:24Z."],"dc:format":["application/pdf"],"dc:identifier":["http://hdl.handle.net/2142/95516"],"dc:language":["en"],"dc:rights":["Copyright 2016 Lonna Edwards"],"dc:subject":["photochemical etching","microfluidic device","wet chemical etching","gallium arsenide","semiconductor"],"dc:title":["Characterization of the photochemical etching process: an alternative microfluidic device fabrication method"],"dc:type":["text"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:37Z"}