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University of Illinois at Urbana-Champaign
Interactions of WF(6) With TiN/Ti Barriers During W Chemical Vapor Deposition
Abstract
dc:descriptionF buildup in the Ti underlayer of TiN/Ti bilayers is suggested to be the major cause of delamination. High F concentration causes phase formation and alters the chemistry of the Ti/SiO$\sb2$ interface. Large stresses generated due to TiF$\sb3$ formation, and destruction of the Ti glue layer due to TiF$\sb4$ evolution jeopardize the adhesion of the TiN/Ti bilayer at the Ti/SiO$\sb2$ interface. The delamination problem can be alleviated by improving the TiN microstructure and/or by hastening the W nucleation process to minimize the interaction of WF$\sb6$ with the Ti underlayer.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Materials Science and Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Ganapathiraman, Ramanath
- Contributors dc:contributor
-
- Allen, L.H.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI9737110
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/82873