{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82873"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82873","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Interactions of WF(6) With TiN/Ti Barriers During W Chemical Vapor Deposition","abstract":"F buildup in the Ti underlayer of TiN/Ti bilayers is suggested to be the major cause of delamination. High F concentration causes phase formation and alters the chemistry of the Ti/SiO$\\sb2$ interface. Large stresses generated due to TiF$\\sb3$ formation, and destruction of the Ti glue layer due to TiF$\\sb4$ evolution jeopardize the adhesion of the TiN/Ti bilayer at the Ti/SiO$\\sb2$ interface. The delamination problem can be alleviated by improving the TiN microstructure and/or by hastening the W nucleation process to minimize the interaction of WF$\\sb6$ with the Ti underlayer.","abstract_html":"F buildup in the Ti underlayer of TiN/Ti bilayers is suggested to be the major cause of delamination. High F concentration causes phase formation and alters the chemistry of the Ti/SiO$\\sb2$ interface. Large stresses generated due to TiF$\\sb3$ formation, and destruction of the Ti glue layer due to TiF$\\sb4$ evolution jeopardize the adhesion of the TiN/Ti bilayer at the Ti/SiO$\\sb2$ interface. The delamination problem can be alleviated by improving the TiN microstructure and/or by hastening the W nucleation process to minimize the interaction of WF$\\sb6$ with the Ti underlayer.","abstract_has_math":true,"creators":["Ganapathiraman, Ramanath"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Allen, L.H."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:53:25Z","date_published":"2015-09-25T20:53:25Z","updated_at":"2026-07-22T22:26:20Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI9737110"],"render_values":[{"text":"(MiAaPQ)AAI9737110","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82873","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Allen, L.H."]},{"key":"dc:creator","label":"Author","values":["Ganapathiraman, Ramanath"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:53:25Z","10000-01-01","1997"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82873","(MiAaPQ)AAI9737110"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["F buildup in the Ti underlayer of TiN/Ti bilayers is suggested to be the major cause of delamination. High F concentration causes phase formation and alters the chemistry of the Ti/SiO$\\sb2$ interface. Large stresses generated due to TiF$\\sb3$ formation, and destruction of the Ti glue layer due to TiF$\\sb4$ evolution jeopardize the adhesion of the TiN/Ti bilayer at the Ti/SiO$\\sb2$ interface. The delamination problem can be alleviated by improving the TiN microstructure and/or by hastening the W nucleation process to minimize the interaction of WF$\\sb6$ with the Ti underlayer.","Made available in DSpace on 2015-09-25T20:53:25Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9737110.pdf: 5018796 bytes, checksum: 887c80ce1f83d93b8843ad543a144048 (MD5) Previous issue date: 1997","Embargo set by: Seth Robbins for item 84154 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","142 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997."]},{"key":"dc:title","label":"Title","values":["Interactions of WF(6) With TiN/Ti Barriers During W Chemical Vapor Deposition"]}]}],"canonical_facts":{"dc:contributor":["Allen, L.H."],"dc:creator":["Ganapathiraman, Ramanath"],"dc:date":["2015-09-25T20:53:25Z","10000-01-01","1997"],"dc:description":["F buildup in the Ti underlayer of TiN/Ti bilayers is suggested to be the major cause of delamination. High F concentration causes phase formation and alters the chemistry of the Ti/SiO$\\sb2$ interface. Large stresses generated due to TiF$\\sb3$ formation, and destruction of the Ti glue layer due to TiF$\\sb4$ evolution jeopardize the adhesion of the TiN/Ti bilayer at the Ti/SiO$\\sb2$ interface. The delamination problem can be alleviated by improving the TiN microstructure and/or by hastening the W nucleation process to minimize the interaction of WF$\\sb6$ with the Ti underlayer.","Made available in DSpace on 2015-09-25T20:53:25Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9737110.pdf: 5018796 bytes, checksum: 887c80ce1f83d93b8843ad543a144048 (MD5) Previous issue date: 1997","Embargo set by: Seth Robbins for item 84154 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","142 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997."],"dc:identifier":["http://hdl.handle.net/2142/82873","(MiAaPQ)AAI9737110"],"dc:language":["eng"],"dc:subject":["Physics, Condensed Matter"],"dc:title":["Interactions of WF(6) With TiN/Ti Barriers During W Chemical Vapor Deposition"],"dc:type":["text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:20Z"}