Interactions of WF(6) With TiN/Ti Barriers During W Chemical Vapor Deposition
type: CreativeWork
description: F buildup in the Ti underlayer of TiN/Ti bilayers is suggested to be the major cause of delamination. High F concentration causes phase formation and alters the chemistry of the Ti/SiO$\sb2$ interface. Large stresses generated due to TiF$\sb3$ formation, and destruction of the Ti glue layer due to TiF$\sb4$ evolution jeopardize the adhesion of the TiN/Ti bilayer at the Ti/SiO$\sb2$ interface. The delamination problem can be alleviated by improving the TiN microstructure and/or by hastening the W nucleation process to minimize the interaction of WF$\sb6$ with the Ti underlayer.
abstract: F buildup in the Ti underlayer of TiN/Ti bilayers is suggested to be the major cause of delamination. High F concentration causes phase formation and alters the chemistry of the Ti/SiO$\sb2$ interface. Large stresses generated due to TiF$\sb3$ formation, and destruction of the Ti glue layer due to TiF$\sb4$ evolution jeopardize the adhesion of the TiN/Ti bilayer at the Ti/SiO$\sb2$ interface. The delamination problem can be alleviated by improving the TiN microstructure and/or by hastening the W nucleation process to minimize the interaction of WF$\sb6$ with the Ti underlayer.
author: Ganapathiraman, Ramanath
language: eng
keywords: Physics, Condensed Matter
date published: 2015-09-25T20:53:25Z
date modified: 2026-07-22T22:26:20Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/82873