Back to results
University of Illinois at Urbana-Champaign
Fluctuation Electron Microscopy of Medium Range Order in Ion -Implanted Amorphous Silicon
Abstract
dc:description"The results of post-anneal implantation also indicate that the degree of medium-range ordering depends on ion mass. More specifically, the degree of medium-range ordering increases with ion mass and energy. This has been confirmed by the observations of depth dependence and the effect of implantation. We speculate that the origin of the paracrystalline state during implantation is associated with ""energy spikes."" This model can also qualitatively explain the dependence on ion mass and energy. Our results have an important implication for the processing of silicon by ion implantation, and further computer simulations of this fascinating phenomenon will be very helpful."
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Materials Science and Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Cheng, Ju-Yin
- Contributors dc:contributor
-
- Gibson, J.M.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3070272
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/82728