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Showing 1 to 20 of 54 for “"Ion-Implanted"”.
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Photoluminescence From Ion Implanted Silicon
Made available in DSpace on 2014-12-10T19:07:24Z (GMT). No. of bitstreams: 1 7511693.pdf: 3187391 bytes, checksum: 645fd023597be72bc038859e4add8fe9 (MD5) Previous issue date: 1974
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Optical Behavior of Ion Implanted Polymers
PS and PMMA samples were prepared and implanted with 50 keV N⁺ ions at doses ranging from 7 x 10¹⁴ to 7 x 10¹⁵ ions/cm². The transmittance, reflectance, and absorbance properties of these samples were studied across wavelengths ranging from 300 to nm and compared to the properties in 800 and 1200 …
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Laser Annealing of Ion Implanted Silicon
… detailed theoretical and experimental investigation of the dynamics of surface melting and regrowth and electrical activation of Si('+) and BF(,2)('+) ion implanted amorphized silicon annealed with a Q-switched Nd:glass laser ((lamda)= 1.06 (mu)m). In the theoretical calculations we have used the …
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Plasma Annealing of Ion Implanted Semiconductors
… discharge system is used to anneal BF(,2)('+) implanted silicon. The system is compact and efficient, and has a continuously variable power flux incident on the surface of the sample.
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Microstructure Evolution in Ion -Implanted Aluminum Gallium Arsenide
… for the varied microstructures observed in implanted AlxGa1-xAs. An amorphization model based on the physical and thermal properties of AlxGa1-xAs is presented. The variation of the microstructure with Al content is demonstrated to be a function of the distribution of energetic recoils in …
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Swept Line Electron Beam Annealing of Ion-Implanted Semiconductors
… a Swept Line Electron Beam (SLEB) in annealing ion-implanted semiconductors are examined. This technique employs a fixed geometry, line-shaped electron beam through which implanted samples are mechanically scanned. In general, this technique can produce annealing results comparable or superior …
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Atomic and Electrical Profile Studies of Ion-Implanted Semiconductors
Made available in DSpace on 2014-12-12T20:54:55Z (GMT). No. of bitstreams: 1 7913542.pdf: 3858567 bytes, checksum: 275f800d91f341d776f2c8635e227a4d (MD5) Previous issue date: 1978
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The Mechanical and Tribological Properties of Ion Implanted Ceramics
The mechanical properties of ion implanted ceramics are primarily a function of the radiation damage produced by the implantation process. For crystalline ceramics this damage is chiefly nuclear displacements, though for glasses electronic effects have also been observed. In this study a number of …
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Ion -Implanted GaAs MESFET MMICs for 77-Ghz Automotive Radar
This dissertation summarizes the design and performance of a set of MMICs fabricated at the University of Illinois in a 0.12-mum direct ion-implanted GaAs MESFET process. The circuits are suitable for insertion into a 77-GHz automotive radar system. This work develops non-linear, linear and noise …
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Structural studies of graphite intercalation compounds and ion implanted graphite
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Physics, 1985.
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Raman-scattering studies of the structure of ion-implanted GaAs
… performed in order to study the structure of ion-implanted GaAs, prior to any anneal. The spectroscopic evidence is consistent with a fine-scale mixture of amorphous and microcrystalline GaAs. Excessive bombardment with 120-keV SiF₃⁺ ions results in a 500-A thick surface layer which is …
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Fluctuation Electron Microscopy of Medium Range Order in Ion -Implanted Amorphous Silicon
"The results of post-anneal implantation also indicate that the degree of medium-range ordering depends on ion mass. More specifically, the degree of medium-range ordering increases with ion mass and energy. This has been confirmed by the observations of depth dependence and the effect of …
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The wear behaviour of UHMWPE and ion implanted UHMWPE against differing counterfaces
… high molecular weight polyethylene (UHMWPE) and ion implanted UHMWPE during water lubricated reciprocating sliding against differing stainless steel and Yttria Partially Stabilised Zirconia (YPSZ) counterfaces. A new laboratory test apparatus was designed, built and commissioned to facilitate …
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Nonlinear optical properties of novel nanostructured ion implanted laser ablated silicon using femtosecond pulse excitation
… optical properties of novel nanostructured ion implanted and laser ablation of Silicon is motivated by the need for materials that exhibit large values of the real part of the third order nonlinear susceptibility ([chi]^{(3)}_{Re}). This property is essential for light controlled phase or …
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Development of Direct Ion -Implanted Gallium Arsenide MESFET and Low-Actuation-Voltage RF MEM Switches
… GaAs MESFETs will provide a solution to low-cost NMCs, and the circuit results justify the readiness of this technology in Ka-band and V-band applications. The low operation-voltage switches will facilitate the direct integration with current MMICs and provide a solution to …
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Millimeter-wave low-noise amplifiers using cost-effective ion-implanted MESFETs and coplanar transmission lines
This dissertation describes the design and implementation of a monolithic 38 GHz low-noise amplifier using 0.25 $\mu$m ion-implanted GaAs MESFETs and coplanar waveguide transmission lines. It describes the development of low-noise GaAs FETs, measurement and modeling of active and passive …
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Formation and dynamics of defects in pure and ion implanted a-titanium studied by quantum simulations
Density-functional theory calculations have been performed to study energetics of defects formation and diffusion in pure and krypton implanted hexagonal closed-packed (h.c.p) titanium. We employed the ab initio electronic structure calculations to study the formation energies of Ti vacancies and …
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Investigations of ultra shallow junction ion implanted biaxial tensile strained silicon by means of X-Ray, Raman and photoacoustic techniques
The application of strain to the active channel region of the metal-oxide-semiconductor-field-effect-transistor (MOSFET) has become a necessary practice in integrated circuit (IC) fabrication. The introduction of strain allows increased carrier mobilities, and concomitant device performance …
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