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University of Illinois at Urbana-Champaign
Plasma Annealing of Ion Implanted Semiconductors
Abstract
dc:descriptionA gas discharge system is used to anneal BF(,2)('+) implanted silicon. The system is compact and efficient, and has a continuously variable power flux incident on the surface of the sample.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2014
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Ianno, Natale Joseph
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (UMI)AAI8203493
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/66263