{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/66263"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/66263","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Plasma Annealing of Ion Implanted Semiconductors","abstract":"A gas discharge system is used to anneal BF(,2)('+) implanted silicon. The system is compact and efficient, and has a continuously variable power flux incident on the surface of the sample.","abstract_html":"A gas discharge system is used to anneal BF(,2)('+) implanted silicon. The system is compact and efficient, and has a continuously variable power flux incident on the surface of the sample.","abstract_has_math":false,"creators":["Ianno, Natale Joseph"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-12T20:55:27Z","date_published":"2014-12-12T20:55:27Z","updated_at":"2026-07-22T22:25:55Z","subjects":["Physics, Electricity and Magnetism"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8203493"],"render_values":[{"text":"(UMI)AAI8203493","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/66263","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Ianno, Natale Joseph"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-12T20:55:27Z","10000-01-01","1981"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Electricity and Magnetism"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/66263","(UMI)AAI8203493"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["A gas discharge system is used to anneal BF(,2)('+) implanted silicon. The system is compact and efficient, and has a continuously variable power flux incident on the surface of the sample.","It is found samples annealed in this system exhibit a non-uniform regrowth from the amorphous-single crystal interface. This result is attributed to the non-instantaneous temperature rise of the sample. Also, samples annealed at power fluxes of 17 W/cm('2) or greater show about 100% activation of the boron in the initially amorphized region. Samples annealed at lower power levels exhibit a complete regrowth of the amorphous layer, but the activation of the boron decreases as the power level decreases. Continued annealing of these samples at the same power flux has little effect on the activation.","Made available in DSpace on 2014-12-12T20:55:27Z (GMT). No. of bitstreams: 1 8203493.pdf: 1903588 bytes, checksum: 14248011d0534c6f733f16601596c503 (MD5) Previous issue date: 1981","Embargo set by: Seth Robbins for item 66442 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","70 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981."]},{"key":"dc:title","label":"Title","values":["Plasma Annealing of Ion Implanted Semiconductors"]}]}],"canonical_facts":{"dc:creator":["Ianno, Natale Joseph"],"dc:date":["2014-12-12T20:55:27Z","10000-01-01","1981"],"dc:description":["A gas discharge system is used to anneal BF(,2)('+) implanted silicon. The system is compact and efficient, and has a continuously variable power flux incident on the surface of the sample.","It is found samples annealed in this system exhibit a non-uniform regrowth from the amorphous-single crystal interface. This result is attributed to the non-instantaneous temperature rise of the sample. Also, samples annealed at power fluxes of 17 W/cm('2) or greater show about 100% activation of the boron in the initially amorphized region. Samples annealed at lower power levels exhibit a complete regrowth of the amorphous layer, but the activation of the boron decreases as the power level decreases. Continued annealing of these samples at the same power flux has little effect on the activation.","Made available in DSpace on 2014-12-12T20:55:27Z (GMT). No. of bitstreams: 1 8203493.pdf: 1903588 bytes, checksum: 14248011d0534c6f733f16601596c503 (MD5) Previous issue date: 1981","Embargo set by: Seth Robbins for item 66442 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","70 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981."],"dc:identifier":["http://hdl.handle.net/2142/66263","(UMI)AAI8203493"],"dc:language":["eng"],"dc:subject":["Physics, Electricity and Magnetism"],"dc:title":["Plasma Annealing of Ion Implanted Semiconductors"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:55Z"}