{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82728"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82728","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Fluctuation Electron Microscopy of Medium Range Order in Ion -Implanted Amorphous Silicon","abstract":"\"The results of post-anneal implantation also indicate that the degree of medium-range ordering depends on ion mass. More specifically, the degree of medium-range ordering increases with ion mass and energy. This has been confirmed by the observations of depth dependence and the effect of implantation. We speculate that the origin of the paracrystalline state during implantation is associated with \"\"energy spikes.\"\" This model can also qualitatively explain the dependence on ion mass and energy. Our results have an important implication for the processing of silicon by ion implantation, and further computer simulations of this fascinating phenomenon will be very helpful.\"","abstract_html":""The results of post-anneal implantation also indicate that the degree of medium-range ordering depends on ion mass. More specifically, the degree of medium-range ordering increases with ion mass and energy. This has been confirmed by the observations of depth dependence and the effect of implantation. We speculate that the origin of the paracrystalline state during implantation is associated with ""energy spikes."" This model can also qualitatively explain the dependence on ion mass and energy. Our results have an important implication for the processing of silicon by ion implantation, and further computer simulations of this fascinating phenomenon will be very helpful."","abstract_has_math":false,"creators":["Cheng, Ju-Yin"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Gibson, J.M."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:52:42Z","date_published":"2015-09-25T20:52:42Z","updated_at":"2026-07-22T22:26:18Z","subjects":["Engineering, Materials Science"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3070272"],"render_values":[{"text":"(MiAaPQ)AAI3070272","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82728","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Gibson, J.M."]},{"key":"dc:creator","label":"Author","values":["Cheng, Ju-Yin"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:52:42Z","10000-01-01","2002"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82728","(MiAaPQ)AAI3070272"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["\"The results of post-anneal implantation also indicate that the degree of medium-range ordering depends on ion mass. 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More specifically, the degree of medium-range ordering increases with ion mass and energy. This has been confirmed by the observations of depth dependence and the effect of implantation. We speculate that the origin of the paracrystalline state during implantation is associated with \"\"energy spikes.\"\" This model can also qualitatively explain the dependence on ion mass and energy. Our results have an important implication for the processing of silicon by ion implantation, and further computer simulations of this fascinating phenomenon will be very helpful.\"","Made available in DSpace on 2015-09-25T20:52:42Z (GMT). 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