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University of Illinois at Urbana-Champaign

Control of Thin-Film Silicon Microstructure With Low-Energy Particle Bombardment in Reactive Sputtering

Abstract

dc:description

Hydrogen can be added to the growth chamber to promote a phase change to nanocrystalline silicon at moderate growth temperatures. The growth flux with hydrogen includes energetic (∼100eV) neutral H, produced by the reflection of H2+ions from the target. We determine the kinetic role of these fast H neutrals in the nanocrystalline phase formation by substituting D for H during growth. Crystallization is enhanced with D; we suggest that this higher mass specie enhances a sub-surface restructuring process by enhanced momentum transfer to silicon atoms.

Degree

thesis:*
Name thesis:degree_name
Ph.D.
Level thesis:degree_level
Dissertation
Discipline thesis:degree_discipline
Materials Science and Engineering
Grantor
University of Illinois at Urbana-Champaign
Year dc:date
2015

Author and committee

dc:creator, dc:contributor.*
Author dc:creator
  • Gerbi, Jennifer Elizabeth
Contributors dc:contributor
  • Abelson, John Robert

Subjects

dc:subject × 1

Rights

Language dc:language
eng

Identifiers

dc:identifier.*
Identifier
(MiAaPQ)AAI3017080
OAI identifier oai:identifier
oai:www.ideals.illinois.edu:2142/82698

Chain of custody

source
Harvested from
University of Illinois - Urbana-Champaign
Base URL
www.ideals.illinois.edu/oai-pmh
Last updated
2026-07-22
Source record
OAI-PMH GetRecord
citation

Gerbi, Jennifer Elizabeth. Control of Thin-Film Silicon Microstructure With Low-Energy Particle Bombardment in Reactive Sputtering. Dissertation thesis, University of Illinois at Urbana-Champaign, 2015. http://hdl.handle.net/2142/82698