{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/82698"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/82698","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Control of Thin-Film Silicon Microstructure With Low-Energy Particle Bombardment in Reactive Sputtering","abstract":"Hydrogen can be added to the growth chamber to promote a phase change to nanocrystalline silicon at moderate growth temperatures. The growth flux with hydrogen includes energetic (∼100eV) neutral H, produced by the reflection of H2+ions from the target. We determine the kinetic role of these fast H neutrals in the nanocrystalline phase formation by substituting D for H during growth. Crystallization is enhanced with D; we suggest that this higher mass specie enhances a sub-surface restructuring process by enhanced momentum transfer to silicon atoms.","abstract_html":"Hydrogen can be added to the growth chamber to promote a phase change to nanocrystalline silicon at moderate growth temperatures. The growth flux with hydrogen includes energetic (∼100eV) neutral H, produced by the reflection of H2+ions from the target. We determine the kinetic role of these fast H neutrals in the nanocrystalline phase formation by substituting D for H during growth. Crystallization is enhanced with D; we suggest that this higher mass specie enhances a sub-surface restructuring process by enhanced momentum transfer to silicon atoms.","abstract_has_math":false,"creators":["Gerbi, Jennifer Elizabeth"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Abelson, John Robert"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:52:31Z","date_published":"2015-09-25T20:52:31Z","updated_at":"2026-07-22T22:26:18Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3017080"],"render_values":[{"text":"(MiAaPQ)AAI3017080","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/82698","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Abelson, John Robert"]},{"key":"dc:creator","label":"Author","values":["Gerbi, Jennifer Elizabeth"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:52:31Z","10000-01-01","2001"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/82698","(MiAaPQ)AAI3017080"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Hydrogen can be added to the growth chamber to promote a phase change to nanocrystalline silicon at moderate growth temperatures. 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The growth flux with hydrogen includes energetic (∼100eV) neutral H, produced by the reflection of H2+ions from the target. We determine the kinetic role of these fast H neutrals in the nanocrystalline phase formation by substituting D for H during growth. Crystallization is enhanced with D; we suggest that this higher mass specie enhances a sub-surface restructuring process by enhanced momentum transfer to silicon atoms.","Made available in DSpace on 2015-09-25T20:52:31Z (GMT). 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