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University of Illinois at Urbana-Champaign
Indium Phosphide Based Indium Arsenide Quantum Dot Infrared Photodetectors
Abstract
dc:descriptionBased on the developed QD growth techniques, photoconductive InAs/InAlGaAs/InP QDIPs grown on InP by MBE technique were presented. These devices demonstrated responses to normal incident photoexcitations in the 5-18-mum range. The QDIP device based on bound-to-bound transitions shows a peak responsivity of 113 mA/W and a detectivity of 1.8 x 10 9 cmHz1/2/W at 10 K for a 10-period QD heterostructure. The device based on bound-to-continuum transitions demonstrates an improved dark current characteristics and a better detectivity of 2.1 x 10 9 cmHz1/2/W.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2015
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Zhang, Zhenhua
- Contributors dc:contributor
-
- Cheng, K.Y.
Subjects
dc:subject × 1Rights
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
- (MiAaPQ)AAI3202194
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/80951