Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 80 for “"Dark Current"”.
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"The thick dark current runs": As I Lay Dying -- A Multi-Theoretical Approach
This dissertation focuses on one of the greatest, yet most problematic, novels in William Faulkner's canon. As I Lay Dying, Faulkner's self-proclaimed "tour de force," is a multilayered, multi-voiced text that leaves many critics wondering how to approach it, which has led to there being only a …
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Mid-Wave and Long-Wave Single Uni-polar Barrier Infrared Detectors Based on Antimonide Material Systems
… its potential superior performance from lower dark current, mature III-V material fabrication techniques, and design versatility. However, superior dark current performance has yet to be realized due to large Shockley-Read-Hall generation-recombination current. To overcome this, researchers …
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Dopant Incorporation in InAs/GaAs Quantum Dot Infrared Photodetectors
… light due to selection rules. However, excessive dark current density, which causes QDIPs to underperform theoretical predictions, is a limiting factor for the advancement of QDIP technologies. The purpose of this dissertation research is to achieve a better understanding of dopant incorporation …
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High-Speed and High-Sensitivity Metal-Semiconductor-Metal Photodetectors for Optoelectronic Integrated Circuit Applications
… MSMPD enabled enormous reductions in dark current to be obtained. These modifications afford a reduction in dark current by reducing thermionic emission processes at the Schottky contacts of the MSMPDs. An MSMPD exhibiting 52.9 pA of dark current corresponding to a dark current density …
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Fabrication and characterization of avalanche photodetectors
… a high density array of APDs over a large area. Dark current and photocurrent uniformity of the array are characterized. Leakage current is also analyzed in terms of dark current and cross-talk by examining APDs with different mesa diameters and different separations, respectively. For these …
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Long and short term effects of X-rays on charge coupled devices
… include changes in device operating voltages and dark current. The dark current buildup has been characterised in terms of a prompt component seen immediately following irradiation, and a time dependent component which occurs gradually. A major part of this work was the determination of the …
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Comparative study of dilute nitride and bismide sub-junctions for tandem solar cells
… refers to: the magnitude and quality of the dark current generated by the devices, the spectral response of the solar cells especially in the dilute nitride and bismide absorption regions, and efficiency responsivity to temperature and to elevated radiation. To achieve the latter objectives, …
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Fabrication and characterization of germanium-on-silicon photodiodes
… physics of Ge-on-Si photodiodes, especially the dark current. Low-pressure chemical vapor deposition was used to deposit thick (1 - 2 [mu]m) films on silicon substrates either selectively in oxide windows or in blanket films. Photodetectors were fabricated in both types of films and their optical …
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Single-photon avalanche photodiodes for quantum communication applications in the near-infrared
… the SPAD in the gated operating mode, namely the dark count rate (DCR) of the detector, is defined for the first time. It is shown that while the measured dark current increases with the width of the attached guard ring (AGR), the DCR decreases with increasing AGR width, indicating that anode …
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Theory and experiments of type-II superlattice infrared photodetectors
… to balance lattice strain and reduce detector dark current, but also to simultaneously increase the cutoff wavelength and quantum efficiency. State-of-art interface controlled samples designed for comparison study are processed into devices. The device performance is characterized electrically by …
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Investigation of Infrared Detectors Based on the Gallium-free Superlattice
… primarily the medical and defense fields. The current industry standard material is HgCdTe, which has been developing since its inception in the late 1950s. SLS materials are created from very thin layers, on the order of several to several tens of atomic monolayers, of two different bulk …
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Radiation Damage in CMOS Image Sensors for Space Applications
… Transfer Efficiency (CTE) and increases the dark current of such devices. Experimental work on proton damaged devices is presented, showing the effects on CTE and dark current. The results are compared to a standard CCD by a simulation to take into account the different dimensions and …
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Fabrication and characterization of back illuminated CMOS photodiode array
… CMOS technology, silicon photodiodes are currently recognized as promising choice for the imager core. In this research, the arrays of back illuminated photodiodes were designed, fabricated and demonstrated with CMOS imager fabrication process on silicon wafers. The main purpose of this …
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Heterostructure engineering of quantum dots-in-a-well infrared photodetectors
… to noise ratio of the detector by reducing the dark current significantly, while keeping the photocurrent constant. A systematic experimental study has been conducted for understanding the effect of different types of transitions on the properties of DWELL detectors, which showed that bound to …
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Defect investigations in InAs/GaSb type-II strained layer superlattice
… more mechanically robust, have reduced tunneling currents, and can use strain to suppress Auger recombination. In spite of these advantages, this material still faces several challenges, including low minority carrier lifetime, resulting from trap levels that cause Schockley-Read-Hall …
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The development and application of an astronomical imaging and photometric CCD system
… the flat field, confirmed that the variation of dark current with change in ambient temperature could be predicted by a simple equation, and showed that the dark current could be reduced to approximately 0.2 counts / second (giving a noise level of 12.5 21ectrons / V t seconds ) at an ambient …
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Indium Phosphide Based Indium Arsenide Quantum Dot Infrared Photodetectors
… transitions demonstrates an improved dark current characteristics and a better detectivity of 2.1 x 10 9 cmHz1/2/W.
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A study of InAs based quantum structures for use in optoelectronic devices
… device of bare InAs NWs were fabricated and its current-voltage (I-V) were tested in room temperature. I-V measurements showed that the NW device is a working device with relatively high dark current of 0.0011A and negative photocurrent of (-8.9526×104A). Single NW field effect transistors (FET) …
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Fabrication of nonlithographic semiconductor quantum wire infrared photodetector
… increased signal-to-noise ratio, reduced dark current, wider spectral range and sensitivity to normal incident radiation. The quantum wire IR detectors were implemented using a nonlithographic nanostructure fabrication technique that is capable of producing large arrays of semiconductor …
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