{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/80951"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/80951","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Indium Phosphide Based Indium Arsenide Quantum Dot Infrared Photodetectors","abstract":"Based on the developed QD growth techniques, photoconductive InAs/InAlGaAs/InP QDIPs grown on InP by MBE technique were presented. These devices demonstrated responses to normal incident photoexcitations in the 5-18-mum range. The QDIP device based on bound-to-bound transitions shows a peak responsivity of 113 mA/W and a detectivity of 1.8 x 10 9 cmHz1/2/W at 10 K for a 10-period QD heterostructure. The device based on bound-to-continuum transitions demonstrates an improved dark current characteristics and a better detectivity of 2.1 x 10 9 cmHz1/2/W.","abstract_html":"Based on the developed QD growth techniques, photoconductive InAs/InAlGaAs/InP QDIPs grown on InP by MBE technique were presented. These devices demonstrated responses to normal incident photoexcitations in the 5-18-mum range. The QDIP device based on bound-to-bound transitions shows a peak responsivity of 113 mA/W and a detectivity of 1.8 x 10 9 cmHz1/2/W at 10 K for a 10-period QD heterostructure. The device based on bound-to-continuum transitions demonstrates an improved dark current characteristics and a better detectivity of 2.1 x 10 9 cmHz1/2/W.","abstract_has_math":false,"creators":["Zhang, Zhenhua"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Cheng, K.Y."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:08:58Z","date_published":"2015-09-25T20:08:58Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3202194"],"render_values":[{"text":"(MiAaPQ)AAI3202194","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/80951","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Cheng, K.Y."]},{"key":"dc:creator","label":"Author","values":["Zhang, Zhenhua"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:08:58Z","10000-01-01","2005"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/80951","(MiAaPQ)AAI3202194"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Based on the developed QD growth techniques, photoconductive InAs/InAlGaAs/InP QDIPs grown on InP by MBE technique were presented. 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These devices demonstrated responses to normal incident photoexcitations in the 5-18-mum range. The QDIP device based on bound-to-bound transitions shows a peak responsivity of 113 mA/W and a detectivity of 1.8 x 10 9 cmHz1/2/W at 10 K for a 10-period QD heterostructure. The device based on bound-to-continuum transitions demonstrates an improved dark current characteristics and a better detectivity of 2.1 x 10 9 cmHz1/2/W.","Made available in DSpace on 2015-09-25T20:08:58Z (GMT). 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