Aluminum Gallium Nitride/gallium Nitride HEMTs for High-Power Applications: Transistor Design Issues and Process Development

In this work, the development of fabrication process and transistor designs for high-performance AlGaN/GaN HEMTS required for high-power applications are presented. Three transistor designs under study are a gate-recessed HEMT, asymmetric HEMT with varying gate-drain spacing, and field-plate HEMT. Each transistor design offers a trade-off between microwave and DC characteristics as the key design parameter is varied. The knowledge of this trade-off is crucial in the design of AlGaN/GaN HEMTS. Dependence of DC, microwave and large signal performance on design parameters is presented so that the trade-off between DC and microwave characteristics can be established, which will facilitate the optimization of AlGaN/GaN HEMT design for high-power applications. This work contributes to the developmental research in the field of GaN-based FETs.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Kuliev, Almaz S.

Contributors dc:contributor

• I. Adesida

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI3130961

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80859