{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/80859"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/80859","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Aluminum Gallium Nitride/gallium Nitride HEMTs for High-Power Applications: Transistor Design Issues and Process Development","abstract":"In this work, the development of fabrication process and transistor designs for high-performance AlGaN/GaN HEMTS required for high-power applications are presented. Three transistor designs under study are a gate-recessed HEMT, asymmetric HEMT with varying gate-drain spacing, and field-plate HEMT. Each transistor design offers a trade-off between microwave and DC characteristics as the key design parameter is varied. The knowledge of this trade-off is crucial in the design of AlGaN/GaN HEMTS. Dependence of DC, microwave and large signal performance on design parameters is presented so that the trade-off between DC and microwave characteristics can be established, which will facilitate the optimization of AlGaN/GaN HEMT design for high-power applications. This work contributes to the developmental research in the field of GaN-based FETs.","abstract_html":"In this work, the development of fabrication process and transistor designs for high-performance AlGaN/GaN HEMTS required for high-power applications are presented. Three transistor designs under study are a gate-recessed HEMT, asymmetric HEMT with varying gate-drain spacing, and field-plate HEMT. Each transistor design offers a trade-off between microwave and DC characteristics as the key design parameter is varied. The knowledge of this trade-off is crucial in the design of AlGaN/GaN HEMTS. Dependence of DC, microwave and large signal performance on design parameters is presented so that the trade-off between DC and microwave characteristics can be established, which will facilitate the optimization of AlGaN/GaN HEMT design for high-power applications. This work contributes to the developmental research in the field of GaN-based FETs.","abstract_has_math":false,"creators":["Kuliev, Almaz S."],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["I. Adesida"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-09-25T20:08:31Z","date_published":"2015-09-25T20:08:31Z","updated_at":"2026-07-22T22:26:15Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(MiAaPQ)AAI3130961"],"render_values":[{"text":"(MiAaPQ)AAI3130961","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/80859","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["I. Adesida"]},{"key":"dc:creator","label":"Author","values":["Kuliev, Almaz S."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-09-25T20:08:31Z","10000-01-01","2004"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/80859","(MiAaPQ)AAI3130961"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In this work, the development of fabrication process and transistor designs for high-performance AlGaN/GaN HEMTS required for high-power applications are presented. Three transistor designs under study are a gate-recessed HEMT, asymmetric HEMT with varying gate-drain spacing, and field-plate HEMT. Each transistor design offers a trade-off between microwave and DC characteristics as the key design parameter is varied. The knowledge of this trade-off is crucial in the design of AlGaN/GaN HEMTS. Dependence of DC, microwave and large signal performance on design parameters is presented so that the trade-off between DC and microwave characteristics can be established, which will facilitate the optimization of AlGaN/GaN HEMT design for high-power applications. This work contributes to the developmental research in the field of GaN-based FETs.","Made available in DSpace on 2015-09-25T20:08:31Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3130961.pdf: 5289380 bytes, checksum: 2bb81cae230a1377a16e3b8e5b2db437 (MD5) Previous issue date: 2004","Embargo set by: Seth Robbins for item 82141 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","97 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004."]},{"key":"dc:title","label":"Title","values":["Aluminum Gallium Nitride/gallium Nitride HEMTs for High-Power Applications: Transistor Design Issues and Process Development"]}]}],"canonical_facts":{"dc:contributor":["I. Adesida"],"dc:creator":["Kuliev, Almaz S."],"dc:date":["2015-09-25T20:08:31Z","10000-01-01","2004"],"dc:description":["In this work, the development of fabrication process and transistor designs for high-performance AlGaN/GaN HEMTS required for high-power applications are presented. Three transistor designs under study are a gate-recessed HEMT, asymmetric HEMT with varying gate-drain spacing, and field-plate HEMT. Each transistor design offers a trade-off between microwave and DC characteristics as the key design parameter is varied. The knowledge of this trade-off is crucial in the design of AlGaN/GaN HEMTS. Dependence of DC, microwave and large signal performance on design parameters is presented so that the trade-off between DC and microwave characteristics can be established, which will facilitate the optimization of AlGaN/GaN HEMT design for high-power applications. This work contributes to the developmental research in the field of GaN-based FETs.","Made available in DSpace on 2015-09-25T20:08:31Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3130961.pdf: 5289380 bytes, checksum: 2bb81cae230a1377a16e3b8e5b2db437 (MD5) Previous issue date: 2004","Embargo set by: Seth Robbins for item 82141 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","97 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004."],"dc:identifier":["http://hdl.handle.net/2142/80859","(MiAaPQ)AAI3130961"],"dc:language":["eng"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Aluminum Gallium Nitride/gallium Nitride HEMTs for High-Power Applications: Transistor Design Issues and Process Development"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:15Z"}