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Showing 1 to 20 of 117 for “"HEMT"”.
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InGaAs self-aligned HEMT for logic applications
… InGaAs high electron mobility transistors (HEMTs) have already been shown to hold great promise for logic devices but they are typically not self-aligned nor enhancement mode and as such are not suitable for scaled VLSI applications. In this work a novel self-aligned device architecture for …
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Transport properties along the channel of a Hemt
… modeling of a high electron mobility transistor (HEMT), it is inherently assumed that the variation of quantum confinement along the channel from the source to the drain is about the same and therefore, the transport properties are independent of position and only dependent on the electric field …
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Gallium Nitride-Based HEMT Devices Modeling and Performance Characterization
The AlGaN/GaN high electron mobility transistor (HEMT) is a promising candidate for microwave applications due to its high power and low noise characteristics at such frequencies. As a result of improved material growth and processing technologies, microwave power densities have been demonstrated …
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Linearity Enhancement of High Power GaN HEMT Amplifier Circuits
Gallium Nitride (GaN) technology is capable of very high power levels but suffers from high non-linearity. With the advent of 5G technologies, high linearity is in greater demand due to complex modulation schemes and crowded RF (Radio Frequency) spectrum. Because of the non-linearity issue, GaN …
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Characterization and Failure Mode Analysis of Cascode GaN HEMT
… nitride (GaN) high electron mobility transistor (HEMT) is expected to be a promising candidate for high frequency power conversion techniques. Due to the advantages of the material, the GaN HEMT has a better figure of merit (FOM) compared to the state-of-the-art silicon (Si) power metal oxide …
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GaN grown on SiC by MOCVD: Material for HEMT applications
Contains fulltext : 147009.pdf (Publisher’s version ) (Open Access)
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Characterization of GaN MOS-HEMT trap-related effects for power switching applications
… High-Electron-Mobility Transistors (MOS-HEMTs) characterization. Various aspects of GaN MOS-HEMTs, such as the DC characteristic, temperature dependency, breakdown behavior and trap-related effects, were studied. Multiple customized measurement setups and configurations, including …
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Investigation of Threshold Voltage Instability in Normally Off GaN on Si HEMT
… on Si High Electron Mobility Transistors (HEMT) have gained unprecedented commercial attention. Normally off HEMT devices are essential to design robust power systems. Of the various normally off HEMT architectures p- GaN HEMT has significant traction. Despite the advancements, reliability …
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Einfluss der Schichteigenschaften auf das elektrische und optoelektrische Verhalten von AlGaN-GaN-HEMT-Transistoren
The mismatch of the lattice constants and of the thermal expansion coefficients between gallium nitride (GaN) and its substrates like sapphire, silicon and silicon carbide is responsible for a high concentration of defects in AlGaN/GaN layers. The influence of these electrically active centres …
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Crecimiento y fabricación de transistores HEMT de AlGaN/GaN por epitaxia de haces moleculares
… para la fabricación de los transistores HEMT de AlGaN/GaN: aislamiento tipo mesa, obtención de contactos óhmicos (fuente y drenador), y barreras Schottky (puerta). La gran influencia de los contactos óhmicos sobre las características finales del dispositivo ha obligado a la optimización …
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Ingeniería de estructura y composición de nitruros componentes de transistores HEMT de nueva generación
… de nitruros componentes de transistores HEMT de nueva generación” (Engineering of structure and composition of nitrides for their implementation in novel HEMT transistors) has been carried out in the Department of Material Science and Metallurgical Engineering, and Inorganic Chemistry of …
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Degradation study of AIGaN/GaN HEMT through electro-thermo-mechanical calculations and thermo-reflectance measurements
… AIGaN/GaN high electron mobility transistors (HEMTs) have been intensively studied for high frequency high power applications. In spite of this great interest, device reliability is still an important challenge for the wide deployment of AIGaN/GaN HEMT technology. To fully understand …
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MOVPE growth and characterization of Al Kappa Ga 1 - Kappa N/GaN heterostructures for HEMT application
… substrates was investigated with respect to HEMT application. The prerequisites for excellent HEMT devices were defined with respect to their structural properties: the HEMT structure should consist of a highly resistive buffer layer, a highly conductive channel layer, have a smooth …
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Thermo-mechanical Analysis of a Custom PCB-DBC Hybrid Package for a (650 V, 150 A) e-GaN HEMT
… than Si, GaN high electron mobility transistors (HEMTs) can have lower on-state losses and higher switching frequencies in a smaller package. This makes GaN HEMTs an attractive choice for compact, high efficiency power devices. However, the package designs used for Si cannot be used for GaN HEMTs, …
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Fabrication and characterization of AIGaN/GaN HEMTs
… and Schottky contact using Pd/Au on AlGaN/GaN HEMT has been developed. A specific contact resistance of 1.08 x 10-7 W cm2 was achieved and an Schottky barrier height of 1.12eV was reached. Large dimension AlGaN/GaN HEMT devices with two different epilayer designs have been fabricated. A maximum …
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A multisubband self-consistent two-dimensional numerical model for Hemt including intersubband and intrasubband scattering mechanisms in the quantum well
The previous one-subband model is extended to include transport of electrons in the quantum well with two subbands. The two higher moments of Boltzmann Transport Equations are solved for the two lowest subbands and the bulk system. The Schrodinger's and Poisson's Equations are solved …
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