Characterization of GaN MOS-HEMT trap-related effects for power switching applications

This thesis presents the experiment setup and result of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) characterization. Various aspects of GaN MOS-HEMTs, such as the DC characteristic, temperature dependency, breakdown behavior and trap-related effects, were studied. Multiple customized measurement setups and configurations, including hardware and software, are discussed. We have estimated trap distribution using the capacitance and the conductance method. Pulse measurements and stress tests with various bias conditions were used to understand trap-related degradations. Performance and trap-related comparisons between our device and the literature are also included.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Zhang, Dabin

• Gallium nitride (GaN)
• Metal-Oxide-Semiconductor (MOS)
• High-Electron-Mobility Transistor (HEMT)
• Reliability

Statement dc:rights

• Copyright 2015 Dabin Zhang

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/78692

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/78692