{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/78692"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/78692","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Characterization of GaN MOS-HEMT trap-related effects for power switching applications","abstract":"This thesis presents the experiment setup and result of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) characterization. Various aspects of GaN MOS-HEMTs, such as the DC characteristic, temperature dependency, breakdown behavior and trap-related effects, were studied. Multiple customized measurement setups and configurations, including hardware and software, are discussed. We have estimated trap distribution using the capacitance and the conductance method. Pulse measurements and stress tests with various bias conditions were used to understand trap-related degradations. Performance and trap-related comparisons between our device and the literature are also included.","abstract_html":"This thesis presents the experiment setup and result of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) characterization. Various aspects of GaN MOS-HEMTs, such as the DC characteristic, temperature dependency, breakdown behavior and trap-related effects, were studied. Multiple customized measurement setups and configurations, including hardware and software, are discussed. We have estimated trap distribution using the capacitance and the conductance method. Pulse measurements and stress tests with various bias conditions were used to understand trap-related degradations. Performance and trap-related comparisons between our device and the literature are also included.","abstract_has_math":false,"creators":["Zhang, Dabin"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2015,"date_issued":"2015-07-22T22:34:04Z","date_published":"2015-07-22T22:34:04Z","updated_at":"2026-07-22T22:26:12Z","subjects":["Gallium nitride (GaN)","Metal-Oxide-Semiconductor (MOS)","High-Electron-Mobility Transistor (HEMT)","Reliability"],"languages":["en"],"rights":["Copyright 2015 Dabin Zhang"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/78692","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Zhang, Dabin"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2015-07-22T22:34:04Z","2017-07-23T09:15:38Z","2015-05","2015-04-30","2015-5"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Gallium nitride (GaN)","Metal-Oxide-Semiconductor (MOS)","High-Electron-Mobility Transistor (HEMT)","Reliability"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2015 Dabin Zhang"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/78692"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This thesis presents the experiment setup and result of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) characterization. Various aspects of GaN MOS-HEMTs, such as the DC characteristic, temperature dependency, breakdown behavior and trap-related effects, were studied. Multiple customized measurement setups and configurations, including hardware and software, are discussed. We have estimated trap distribution using the capacitance and the conductance method. Pulse measurements and stress tests with various bias conditions were used to understand trap-related degradations. Performance and trap-related comparisons between our device and the literature are also included.","Submission published under a 24 month embargo labeled 'U of I only', the embargo will last until 2017-05-01","The student, Dabin Zhang, accepted the attached license on 2015-04-29 at 21:36.","The student, Dabin Zhang, submitted this Thesis for approval on 2015-04-29 at 21:52.","This Thesis was approved for publication on 2015-04-30 at 13:31.","DSpace SAF Submission Ingestion Package generated from Vireo submission #8203 on 2015-07-22 at 14:19:09","Made available in DSpace on 2015-07-22T22:34:04Z (GMT). No. of bitstreams: 2 ZHANG-THESIS-2015.pdf: 2596813 bytes, checksum: 3675934e03afa344475d959fa2659ed6 (MD5) LICENSE.txt: 4208 bytes, checksum: ccda6104a83061b017078d4ad840712d (MD5) Previous issue date: 2015-04-30","Embargo set by: Seth Robbins for item 79933 Lift date: 2017-07-22T22:34:16Z Reason: Author requested U of Illinois access only (OA after 2yrs) in Vireo ETD system","U of I Only Restriction Lifted for Item 79933 on 2017-07-23T09:15:38Z."]},{"key":"dc:format","label":"Dc Format","values":["application/pdf"]},{"key":"dc:title","label":"Title","values":["Characterization of GaN MOS-HEMT trap-related effects for power switching applications"]}]}],"canonical_facts":{"dc:creator":["Zhang, Dabin"],"dc:date":["2015-07-22T22:34:04Z","2017-07-23T09:15:38Z","2015-05","2015-04-30","2015-5"],"dc:description":["This thesis presents the experiment setup and result of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) characterization. Various aspects of GaN MOS-HEMTs, such as the DC characteristic, temperature dependency, breakdown behavior and trap-related effects, were studied. Multiple customized measurement setups and configurations, including hardware and software, are discussed. We have estimated trap distribution using the capacitance and the conductance method. Pulse measurements and stress tests with various bias conditions were used to understand trap-related degradations. Performance and trap-related comparisons between our device and the literature are also included.","Submission published under a 24 month embargo labeled 'U of I only', the embargo will last until 2017-05-01","The student, Dabin Zhang, accepted the attached license on 2015-04-29 at 21:36.","The student, Dabin Zhang, submitted this Thesis for approval on 2015-04-29 at 21:52.","This Thesis was approved for publication on 2015-04-30 at 13:31.","DSpace SAF Submission Ingestion Package generated from Vireo submission #8203 on 2015-07-22 at 14:19:09","Made available in DSpace on 2015-07-22T22:34:04Z (GMT). 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