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S.I. : s.n.

GaN grown on SiC by MOCVD: Material for HEMT applications

dc:creator Rudzinski, M.

dc:date2008

Abstract

dc:description

Contains fulltext : 147009.pdf (Publisher’s version ) (Open Access)

Degree

thesis:*

Grantor dc:publisher: S.I. : s.n.
Year dc:date: 2008

Author and committee

dc:creator, dc:contributor.*

Author dc:creator: Rudzinski, M.
Contributors dc:contributor: Larsen, P.K.

Subjects

dc:subject × 1

Applied Materials Science

Identifiers

dc:identifier.*

Handle dc:identifier: https://hdl.handle.net/2066/147009
OAI identifier oai:identifier: oai:repository.ubn.ru.nl:2066/147009

Chain of custody

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Harvested from: Radboud University Nijmegen
Base URL: repository.ubn.ru.nl/oai/request
Last updated: 2026-07-24
Source record: OAI-PMH GetRecord

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citation

Rudzinski, M.. GaN grown on SiC by MOCVD: Material for HEMT applications. S.I. : s.n., 2008. https://hdl.handle.net/2066/147009

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