Modeling and Measurements of an Ionized Physical Vapor Depositon Device Plasma

Third, a computer simulation was used to model the transport of sputtered atoms through the IPVD system. The simulation combines Monte Carlo and fluid methods to track the metal atoms that are emitted from the target, interact with the IPVD plasma, and are eventually deposited somewhere in the system. Ground-state neutral, excited, and ionized metal atoms are tracked. The simulation requires plasma conditions to be specified. The primary product of the simulation is a prediction of the ionization fraction of the sputtered atom flux at the substrate under various conditions. This quantity was experimentally measured and the results compared to the simulation.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2015

Author dc:creator

• Juliano, Daniel Rene

Contributors dc:contributor

• Ruzic, David N.

• Engineering, Electronics and Electrical

Language dc:language

eng

Identifier

(MiAaPQ)AAI9955632

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/80677