Modeling and Measurements of an Ionized Physical Vapor Depositon Device Plasma
type: CreativeWork
description: Third, a computer simulation was used to model the transport of sputtered atoms through the IPVD system. The simulation combines Monte Carlo and fluid methods to track the metal atoms that are emitted from the target, interact with the IPVD plasma, and are eventually deposited somewhere in the system. Ground-state neutral, excited, and ionized metal atoms are tracked. The simulation requires plasma conditions to be specified. The primary product of the simulation is a prediction of the ionization fraction of the sputtered atom flux at the substrate under various conditions. This quantity was experimentally measured and the results compared to the simulation.
abstract: Third, a computer simulation was used to model the transport of sputtered atoms through the IPVD system. The simulation combines Monte Carlo and fluid methods to track the metal atoms that are emitted from the target, interact with the IPVD plasma, and are eventually deposited somewhere in the system. Ground-state neutral, excited, and ionized metal atoms are tracked. The simulation requires plasma conditions to be specified. The primary product of the simulation is a prediction of the ionization fraction of the sputtered atom flux at the substrate under various conditions. This quantity was experimentally measured and the results compared to the simulation.
author: Juliano, Daniel Rene
language: eng
keywords: Engineering, Electronics and Electrical
date published: 2015-09-25T20:03:35Z
date modified: 2026-07-22T22:26:14Z
provider: University of Illinois - Urbana-Champaign
publisher: Networked Digital Library of Theses and Dissertations
type: WebPage
source organization: University of Illinois at Urbana-Champaign

PropertyValue
property ID: Handle
value: http://hdl.handle.net/2142/80677