{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/80677"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/80677","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Modeling and Measurements of an Ionized Physical Vapor Depositon Device Plasma","abstract":"Third, a computer simulation was used to model the transport of sputtered atoms through the IPVD system. The simulation combines Monte Carlo and fluid methods to track the metal atoms that are emitted from the target, interact with the IPVD plasma, and are eventually deposited somewhere in the system. Ground-state neutral, excited, and ionized metal atoms are tracked. The simulation requires plasma conditions to be specified. 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