Native Oxides on Aluminum-Bearing Iii-V Semiconductors: Material Characterization and Application to Quantum Well Heterostructure Lasers

Data are presented on the comparison of the chemical stability of oxides of AlAs-GaAs heterostructures formed via atmospheric hydrolysis and by native oxidation at 400$\sp\circ$C for 3 h in a N$\sb2$ + H$\sb2$O vapor. Data indicate that atmospheric hydrolysis involves a chemical reaction that is destructive to the semiconductor material, while native oxidation produces chemically stable compounds that do not attack the semiconductor.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2014

Author dc:creator

• Sugg, Alan Richard

Contributors dc:contributor

• Holonyak, N., Jr.,

• Engineering, Electronics and Electrical
• Physics, Electricity and Magnetism
• Physics, Condensed Matter
• Engineering, Materials Science

Identifier

(UMI)AAI9329171

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/72006