{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/72006"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/72006","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Native Oxides on Aluminum-Bearing Iii-V Semiconductors: Material Characterization and Application to Quantum Well Heterostructure Lasers","abstract":"Data are presented on the comparison of the chemical stability of oxides of AlAs-GaAs heterostructures formed via atmospheric hydrolysis and by native oxidation at 400$\\sp\\circ$C for 3 h in a N$\\sb2$ + H$\\sb2$O vapor. Data indicate that atmospheric hydrolysis involves a chemical reaction that is destructive to the semiconductor material, while native oxidation produces chemically stable compounds that do not attack the semiconductor.","abstract_html":"Data are presented on the comparison of the chemical stability of oxides of AlAs-GaAs heterostructures formed via atmospheric hydrolysis and by native oxidation at 400$\\sp\\circ$C for 3 h in a N$\\sb2$ + H$\\sb2$O vapor. Data indicate that atmospheric hydrolysis involves a chemical reaction that is destructive to the semiconductor material, while native oxidation produces chemically stable compounds that do not attack the semiconductor.","abstract_has_math":true,"creators":["Sugg, Alan Richard"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Holonyak, N., Jr.,"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2014,"date_issued":"2014-12-16T22:23:13Z","date_published":"2014-12-16T22:23:13Z","updated_at":"2026-07-22T22:26:06Z","subjects":["Engineering, Electronics and Electrical","Physics, Electricity and Magnetism","Physics, Condensed Matter","Engineering, Materials Science"],"languages":[],"rights":[],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI9329171"],"render_values":[{"text":"(UMI)AAI9329171","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/72006","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Holonyak, N., Jr.,"]},{"key":"dc:creator","label":"Author","values":["Sugg, Alan Richard"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2014-12-16T22:23:13Z","10000-01-01","1993"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Electricity and Magnetism","Physics, Condensed Matter","Engineering, Materials Science"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/72006","(UMI)AAI9329171"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Data are presented on the comparison of the chemical stability of oxides of AlAs-GaAs heterostructures formed via atmospheric hydrolysis and by native oxidation at 400$\\sp\\circ$C for 3 h in a N$\\sb2$ + H$\\sb2$O vapor. Data indicate that atmospheric hydrolysis involves a chemical reaction that is destructive to the semiconductor material, while native oxidation produces chemically stable compounds that do not attack the semiconductor.","The effects of low-temperature annealing, both with and without excess As, on the native oxides of Al$\\sb{0.8}$Ga$\\sb{0.2}$As are also studied. The samples are analyzed with transmission electron microscopy (TEM), Auger electron spectroscopy (AES), ellipsometry ($\\lambda$ = 6328 A), and SIMS. These data show the as-oxidized (425$\\sp\\circ$C, 40 min) material to be a fine-grained amorphous oxide comprised of moderate temperature phases of Al$\\sb2$O$\\sb3,$ $\\eta,$ $\\gamma,$ $\\delta,$ or $\\chi$ or AlO(OH). The AES data indicate that the Al is oxidized while the Ga remains unoxidized. The native oxide is As-depleted and contains $\\sim$50% oxygen. The index of refraction of the oxide is 1.63.","After being annealed in an evacuated quartz ampoule at 540$\\sp\\circ$C for 4 h with no excess As, the composition of the oxide remains unchanged, but ellipsometer measurements indicate the creation of a secondary interface region $\\sim$550 A thick with an index of refraction of $\\sim$2.93.","In contrast, upon annealing the oxide at the same time and temperature with excess As the oxide changes to a finer-grained amorphous material than the as-oxidized crystal. Electron diffraction data show that the oxide has undergone a change in phase or composition as a result of annealing with an excess As overpressure. Also, a secondary interface region $\\sim$300 A thick has developed with an index of refraction of 2.78.","Native-oxide-embedded Al$\\sb{\\rm y }$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well heterostructures (QWH) have been fabricated and operated as photopumped lasers continuously (cw) at both 77 K and 300 K. In these structures the GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As active region of the QWH is sandwiched between native oxide grown laterally across the entire width of an etched mesa stripe. A comparison of lasing threshold current densities shows no apparent degradation of the oxide-embedded samples relative to the as-grown QWHs.","Data are also presented on Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As QWH laser diodes grown on n-type substrates employing a reverse-biased p+/n+ tunnel junction. The 10 $\\mu$m-wide stripe devices are defined using the native oxide (425$\\sp\\circ$C, 15 min) and operate cw at 300 K with a lasing threshold current of 37 mA (cavity length $\\sim$375 $\\mu$m). The series resistance is $\\sim$10 $\\Omega$ at 50 mA.","Made available in DSpace on 2014-12-16T22:23:13Z (GMT). No. of bitstreams: 1 9329171.pdf: 2742233 bytes, checksum: 2255f11c479cc128b96f0185217a8ef4 (MD5) Previous issue date: 1993","Embargo set by: Seth Robbins for item 72172 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","109 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993."]},{"key":"dc:title","label":"Title","values":["Native Oxides on Aluminum-Bearing Iii-V Semiconductors: Material Characterization and Application to Quantum Well Heterostructure Lasers"]}]}],"canonical_facts":{"dc:contributor":["Holonyak, N., Jr.,"],"dc:creator":["Sugg, Alan Richard"],"dc:date":["2014-12-16T22:23:13Z","10000-01-01","1993"],"dc:description":["Data are presented on the comparison of the chemical stability of oxides of AlAs-GaAs heterostructures formed via atmospheric hydrolysis and by native oxidation at 400$\\sp\\circ$C for 3 h in a N$\\sb2$ + H$\\sb2$O vapor. Data indicate that atmospheric hydrolysis involves a chemical reaction that is destructive to the semiconductor material, while native oxidation produces chemically stable compounds that do not attack the semiconductor.","The effects of low-temperature annealing, both with and without excess As, on the native oxides of Al$\\sb{0.8}$Ga$\\sb{0.2}$As are also studied. The samples are analyzed with transmission electron microscopy (TEM), Auger electron spectroscopy (AES), ellipsometry ($\\lambda$ = 6328 A), and SIMS. These data show the as-oxidized (425$\\sp\\circ$C, 40 min) material to be a fine-grained amorphous oxide comprised of moderate temperature phases of Al$\\sb2$O$\\sb3,$ $\\eta,$ $\\gamma,$ $\\delta,$ or $\\chi$ or AlO(OH). The AES data indicate that the Al is oxidized while the Ga remains unoxidized. The native oxide is As-depleted and contains $\\sim$50% oxygen. The index of refraction of the oxide is 1.63.","After being annealed in an evacuated quartz ampoule at 540$\\sp\\circ$C for 4 h with no excess As, the composition of the oxide remains unchanged, but ellipsometer measurements indicate the creation of a secondary interface region $\\sim$550 A thick with an index of refraction of $\\sim$2.93.","In contrast, upon annealing the oxide at the same time and temperature with excess As the oxide changes to a finer-grained amorphous material than the as-oxidized crystal. Electron diffraction data show that the oxide has undergone a change in phase or composition as a result of annealing with an excess As overpressure. Also, a secondary interface region $\\sim$300 A thick has developed with an index of refraction of 2.78.","Native-oxide-embedded Al$\\sb{\\rm y }$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As quantum well heterostructures (QWH) have been fabricated and operated as photopumped lasers continuously (cw) at both 77 K and 300 K. In these structures the GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As active region of the QWH is sandwiched between native oxide grown laterally across the entire width of an etched mesa stripe. A comparison of lasing threshold current densities shows no apparent degradation of the oxide-embedded samples relative to the as-grown QWHs.","Data are also presented on Al$\\sb{\\rm y}$Ga$\\sb{\\rm 1-y}$As-GaAs-In$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As QWH laser diodes grown on n-type substrates employing a reverse-biased p+/n+ tunnel junction. The 10 $\\mu$m-wide stripe devices are defined using the native oxide (425$\\sp\\circ$C, 15 min) and operate cw at 300 K with a lasing threshold current of 37 mA (cavity length $\\sim$375 $\\mu$m). The series resistance is $\\sim$10 $\\Omega$ at 50 mA.","Made available in DSpace on 2014-12-16T22:23:13Z (GMT). No. of bitstreams: 1 9329171.pdf: 2742233 bytes, checksum: 2255f11c479cc128b96f0185217a8ef4 (MD5) Previous issue date: 1993","Embargo set by: Seth Robbins for item 72172 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs","U of I Only","109 p.","Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1993."],"dc:identifier":["http://hdl.handle.net/2142/72006","(UMI)AAI9329171"],"dc:subject":["Engineering, Electronics and Electrical","Physics, Electricity and Magnetism","Physics, Condensed Matter","Engineering, Materials Science"],"dc:title":["Native Oxides on Aluminum-Bearing Iii-V Semiconductors: Material Characterization and Application to Quantum Well Heterostructure Lasers"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:26:06Z"}